Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

L. W. Wong, S. J. Cai, R. Li, Kang Wang, H. W. Jiang, Mary Chen

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53 Citations (Scopus)

Abstract

We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov-de Hass oscillations, a carrier effective mass of m*=0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012cm-2, only the lowest subband in the quantum well is occupied.

Original languageEnglish
Pages (from-to)1391-1393
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number10
DOIs
Publication statusPublished - 1998

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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