Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

L. W. Wong; S. J. Cai; R. Li; Kang Wang; H. W. Jiang; Mary Chen

doi:10.1063/1.121954

Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

L. W. Wong, S. J. Cai, R. Li, Kang Wang, H. W. Jiang, Mary Chen

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov-de Hass oscillations, a carrier effective mass of m^*=0.228m_e is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×10¹²cm^-2, only the lowest subband in the quantum well is occupied.

Original language	English
Pages (from-to)	1391-1393
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	10
DOIs	https://doi.org/10.1063/1.121954
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.121954

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title = "Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures",

abstract = "We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov-de Hass oscillations, a carrier effective mass of m*=0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012cm-2, only the lowest subband in the quantum well is occupied.",

author = "Wong, {L. W.} and Cai, {S. J.} and R. Li and Kang Wang and Jiang, {H. W.} and Mary Chen",

year = "1998",

doi = "10.1063/1.121954",

language = "English",

volume = "73",

pages = "1391--1393",

journal = "Applied Physics Letters",

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T1 - Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

AU - Wong, L. W.

AU - Cai, S. J.

AU - Li, R.

AU - Wang, Kang

AU - Jiang, H. W.

AU - Chen, Mary

PY - 1998

Y1 - 1998

N2 - We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov-de Hass oscillations, a carrier effective mass of m*=0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012cm-2, only the lowest subband in the quantum well is occupied.

AB - We have performed magnetotransport studies on AlGaN/GaN heterostructures at low temperature and magnetic field up to 30 T. The integer quantum Hall effect is observed in two-dimensional electron gas at the AlGaN/GaN interface. From the temperature dependence of the low-field Shubnikov-de Hass oscillations, a carrier effective mass of m*=0.228me is obtained. Dingle plots of our resistivity data show inhomogeneity in the two-dimensional electron gas. Finally, we found that for electronic density as high as 5.47×1012cm-2, only the lowest subband in the quantum well is occupied.

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DO - 10.1063/1.121954

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

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