Major Implantation-Induced Defects in Conventional and Rapid Annealed Silicon Implanted LEC-Grown GaAs

A. Bindol, K. L. Wang, S. J. Chong, O. M. Stafsudd

Research output: Contribution to journalArticle

Abstract

A major deep donor besides EL2 is found in Si implanted GaAs. This level emerges to be an implantation-induced defect and lies at an energy between Ec -0.88 eV and Ec -1.09 eV. The EL2 defect distributions in conventional and rapid thermal annealed samples were also investigated. From the experimental defect distribution data, stress is believed to create dislocations which promote EL2 formation in rapid annealed samples, a stoichiometric process is found to be the major mechanism for creating EL2. The dependence of EL2 on the annealing temperature and implantation fluence are also obtained.

Original languageEnglish
Pages (from-to)222-225
Number of pages4
JournalJournal of the Electrochemical Society
Volume138
Issue number1
DOIs
Publication statusPublished - 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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