Manipulation of the crystallinity boundary of pulsed laser deposited high-k HfO2-TiO2-Y2O3 combinatorial thin films

J. L. Klamo, P. K. Schenck, P. G. Burke, K. S. Chang, M. L. Green

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Combinatorial library films of HfO2-TiO2-Y 2O3, a high-k dielectric system, grown by pulsed laser deposition, exhibit visible boundary lines separating amorphous and crystalline phases. By changing processing space parameters, specifically substrate temperature during deposition, as well as the composition of the library film, we are able to manipulate the boundary and hence, the microstructural properties of the film. High-throughput x-ray diffraction and spectroscopic reflectometry are effective tools for measuring the properties of the resulting library films altered via these changes in processing. Electrical measurements confirm that the dielectric constant of the library films is composition and microstructure dependent.

Original languageEnglish
Article number054101
JournalJournal of Applied Physics
Volume107
Issue number5
DOIs
Publication statusPublished - 2010 Mar 26

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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