Abstract
This work investigates the manipulation of terahertz surface plasmons (SPs) on a semiconductor surface by applying an external static magnetic field. The dispersion relations of the coupled surface magnetoplasmon under the Voigt configuration in the semiconductor-insulator-semiconductor structure are derived. For a TM-polarized wave that is normally incident onto a semiconductor film with periodic narrow grooves on both surfaces, the applied external static magnetic field with the Voigt configuration redshifts the frequencies of the SP-induced resonant tunneling. This phenomenon is attributable to the reduction in the effective plasma frequency by the applied magnetic field.
| Original language | English |
|---|---|
| Article number | 171114 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2007 May 21 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Manipulation of tunneling frequencies using magnetic fields for resonant tunneling effects of surface plasmons. / Lan, Yung-Chiang; Chang, Yun Chorng; Lee, Peng Hsiao.
In: Applied Physics Letters, Vol. 90, No. 17, 171114, 21.05.2007.Research output: Contribution to journal › Article
TY - JOUR
T1 - Manipulation of tunneling frequencies using magnetic fields for resonant tunneling effects of surface plasmons
AU - Lan, Yung-Chiang
AU - Chang, Yun Chorng
AU - Lee, Peng Hsiao
PY - 2007/5/21
Y1 - 2007/5/21
N2 - This work investigates the manipulation of terahertz surface plasmons (SPs) on a semiconductor surface by applying an external static magnetic field. The dispersion relations of the coupled surface magnetoplasmon under the Voigt configuration in the semiconductor-insulator-semiconductor structure are derived. For a TM-polarized wave that is normally incident onto a semiconductor film with periodic narrow grooves on both surfaces, the applied external static magnetic field with the Voigt configuration redshifts the frequencies of the SP-induced resonant tunneling. This phenomenon is attributable to the reduction in the effective plasma frequency by the applied magnetic field.
AB - This work investigates the manipulation of terahertz surface plasmons (SPs) on a semiconductor surface by applying an external static magnetic field. The dispersion relations of the coupled surface magnetoplasmon under the Voigt configuration in the semiconductor-insulator-semiconductor structure are derived. For a TM-polarized wave that is normally incident onto a semiconductor film with periodic narrow grooves on both surfaces, the applied external static magnetic field with the Voigt configuration redshifts the frequencies of the SP-induced resonant tunneling. This phenomenon is attributable to the reduction in the effective plasma frequency by the applied magnetic field.
UR - http://www.scopus.com/inward/record.url?scp=34248583076&partnerID=8YFLogxK
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U2 - 10.1063/1.2732827
DO - 10.1063/1.2732827
M3 - Article
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 17
M1 - 171114
ER -