TY - GEN
T1 - Manufacture of p-type ZnO thin film by co-sputtering of Zn and Li 2CO3 targets simultaneously
AU - Lu, Yang Ming
AU - Tsai, Shu Yi
AU - Wu, Shin Yi
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - The ZnO thin film has been the subject of much research in recent years due to its varied potential applications for optoelectronic devices. However, the p-type ZnO film conduction with low resistivity is difficult to achieve because of self-compensation effect of the opposite charge carriers in the material itself and low solubility of extrinsic doping acceptors. In this work, lithium-doped ZnO films were grown on glass substrates by RF reactive magnetron sputtering using Zn metal target with several Li2CO3 piece meals on it. This study examined the effect of Li content on the conduction and optical of ZnO thin films by r.f. magnetron sputtering. The structural, electrical and optical properties of the deposited films were strongly influenced by various Li content. The Li compositions of the ZnO thin films were determined by ICP-MS. Elemental depth profiles were performed by SIMS analysis. The structure characterization was used by GIAXRD measurement. Hot probes and Hall measurement were used to determine the resistivity, carrier density and mobility. The GIAXRD analysis indicated that the ZnO:Li films have (002) preferred orientation. The optical transmission spectra show a high transmittance (∼80%) in the visible region. The lowest resistivity of as-grown p-type ZnO:Li film is 4.72x10-1 ohm-cm. A p-type conductive behavior was confirmed by the Hall effect measurement for these ZnO:Li films with a carrier concentration of 2.47x1019cm-3 and hall mobility of 0.85 cm2/V-sec.
AB - The ZnO thin film has been the subject of much research in recent years due to its varied potential applications for optoelectronic devices. However, the p-type ZnO film conduction with low resistivity is difficult to achieve because of self-compensation effect of the opposite charge carriers in the material itself and low solubility of extrinsic doping acceptors. In this work, lithium-doped ZnO films were grown on glass substrates by RF reactive magnetron sputtering using Zn metal target with several Li2CO3 piece meals on it. This study examined the effect of Li content on the conduction and optical of ZnO thin films by r.f. magnetron sputtering. The structural, electrical and optical properties of the deposited films were strongly influenced by various Li content. The Li compositions of the ZnO thin films were determined by ICP-MS. Elemental depth profiles were performed by SIMS analysis. The structure characterization was used by GIAXRD measurement. Hot probes and Hall measurement were used to determine the resistivity, carrier density and mobility. The GIAXRD analysis indicated that the ZnO:Li films have (002) preferred orientation. The optical transmission spectra show a high transmittance (∼80%) in the visible region. The lowest resistivity of as-grown p-type ZnO:Li film is 4.72x10-1 ohm-cm. A p-type conductive behavior was confirmed by the Hall effect measurement for these ZnO:Li films with a carrier concentration of 2.47x1019cm-3 and hall mobility of 0.85 cm2/V-sec.
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U2 - 10.1002/9780470909836.ch25
DO - 10.1002/9780470909836.ch25
M3 - Conference contribution
AN - SCOPUS:77955581602
SN - 9780470889367
T3 - Ceramic Transactions
SP - 265
EP - 271
BT - Design, Development, and Applications of Engineering Ceramics and Composites - A Collection of Papers Presented at the 8th Pacific Rim Conference on Ceramic and Glass Technology, PACRIM 8
PB - American Ceramic Society
T2 - 8th Pacific Rim Conference on Ceramic and Glass Technology, PACRIM-8
Y2 - 31 May 2009 through 5 June 2009
ER -