Abstract
This work attempted to fabricate the solder bump of the structure: Si/Ti/Cu/Electroless Ni/Solder. The shearing strength of the solder bump, with bump pad of 60 μm in diameter, is around 15 g/bump prior to and after reflow. The solder bumps fractured at the solder. Humidity test at 85% of relative humidity at 85°C and a high temperature treatment at 150°C for 1000 h tend to downgrade the shearing strength of the solder portion of the bump, yet not the interface. Both treatments enhance the growth of intermetallic compound (IMC) formed between Ni and solder. The barrier effect of electroless nickel deposit was investigated.
Original language | English |
---|---|
Pages (from-to) | 657-660 |
Number of pages | 4 |
Journal | IEEE Transactions on Components and Packaging Technologies |
Volume | 23 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2000 Dec |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering