Manufacturing of solder bumps with Cu/Ta/Cu as under bump metallurgy

Kwang-Lung Lin, Ya Te Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This study investigated the feasibility of the multilayer Cu/Ta/Cu under bump metallurgy (UBM), deposited on AlN/Si where AlN is a thin film. Interdiffusion study found that Ta is an appropriate diffusion barrier layer for the investigated solder bump structure. The temperature profiles and the flux compositions for solder reflow were also investigated. The flux activators investigated include succinic acid, adipic acid, stearic acid, dimethylamine hydrochloride, and diethylamine hydrochloride. Among these, succinic acid was the most appropriate in terms of wetting and cleaning.

Original languageEnglish
Pages (from-to)580-585
Number of pages6
JournalIEEE Transactions on Advanced Packaging
Volume22
Issue number4
DOIs
Publication statusPublished - 1999 Dec 1

Fingerprint

Metallurgy
Soldering alloys
Acids
Interdiffusion (solids)
Fluxes
Stearic acid
Diffusion barriers
Wetting
Cleaning
Multilayers
Thin films
Chemical analysis
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

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Manufacturing of solder bumps with Cu/Ta/Cu as under bump metallurgy. / Lin, Kwang-Lung; Liu, Ya Te.

In: IEEE Transactions on Advanced Packaging, Vol. 22, No. 4, 01.12.1999, p. 580-585.

Research output: Contribution to journalArticle

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