Abstract
The process for producing Ti/Cu/Electroless Nickel (EN) bumps on Si wafers is discussed in this work. The stepwise fabrication of Ti, Ti/Cu, and Ti/Cu/EN deposits presented in this work. The adhesion strength of the Ti deposit was improved by applying bias voltage during sputter deposition. The electroless nickel deposit enhances the adhesion strength of the Ti/Cu layers. The adhesion strength of the constituent deposit layer was measured with pull test. It was determined that the Ti/Cu/EN structure fractured at the Ti/Cu interface upon pull test.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | International Journal of Microcircuits and Electronic Packaging |
| Volume | 22 |
| Issue number | 1 |
| Publication status | Published - 1999 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering