Mask-free regrowth of GaN p-i-n structure on selective-area Si-implanted n-GaN template layer

Jinn Kong Sheu, Po Cheng Chen, Yu Hsiang Yeh, Shih Hsun Kuo, Ming Lun Lee, Po Hsun Liao, Wei Chih Lai

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

GaN p-i-n homoepitaxial structures are in-situ formed through mask-free selective-area growth (SAG) on Si-implanted GaN (SIG) templates. Selective-area Si implantation on GaN layer creates damaged surface regions that lead to lattice distortion from the neighboring implantation-free regions. GaN homoepitaxial regrowth occurs preferentially on the implantation-free regions when the SIG films serve as growth templates. The optical and electrical characteristics of the GaN p-i-n diodes formed by mask-free SAG are comparable to those of diodes fabricated by conventional technique. The GaN p-i-n photodiodes exhibit typical ultraviolet (UV)-to-visible (360/480 nm) spectral rejection ratios over three orders of magnitude. With forward injection currents of 10-100 mA, the proposed GaN diodes exhibit a UV emission at around 362 nm because of the band-edge transition between shallow donor states and the valence-band edge, rather than defect-related emission.

Original languageEnglish
Pages (from-to)17-25
Number of pages9
JournalActa Materialia
Volume108
DOIs
Publication statusPublished - 2016 Apr 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

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