Maskless lithography based on oblique scanning of point array with digital distortion correction

The oblique scanning of a rectangular array of ultraviolet (UV) spots provides a feasible means of realizing maskless lithography with well-controlled UV exposure. In such a method, the UV light is modulated by a digital micromirror device (DMD), collected by a microlens/pinhole array, and then projected onto a photoresist (PR) layer for UV patterning. However, the strict requirements imposed on the optical distortion of the image projection system pose a significant technical challenge. Accordingly, the present study proposes a method for improving the UV patterning accuracy by using an empirically-derived distortion model to adjust the working DMD images. The patterning errors caused by optical distortion are then further reduced by adjusting the tilt angle of the oblique scanning process. The experimental results show that the proposed method yields a significant reduction in the UV patterning error. Consequently, it provides a practical solution for performing maskless lithography without the need for a high-quality image projection lens system.