TY - JOUR
T1 - Maskless lithography based on oblique scanning of point array with digital distortion correction
AU - Chien, Hung Laing
AU - Chiu, Yi Hsien
AU - Lee, Yung Chun
N1 - Funding Information:
This study was funded by the Ministry of Science and Technology of Taiwan under Project Nos. MOST 108?2622-E-006?016-CC2 and MOST 108?2221-E-006?175-MY3. The authors are grateful for the technical and equipment support provided by the Center for Micro/Nano Science and Technology at National Cheng Kung University (Taiwan).
Funding Information:
This study was funded by the Ministry of Science and Technology of Taiwan under Project Nos. MOST 108–2622-E-006–016-CC2 and MOST 108–2221-E-006–175-MY3 . The authors are grateful for the technical and equipment support provided by the Center for Micro/Nano Science and Technology at National Cheng Kung University (Taiwan).
Publisher Copyright:
© 2020
PY - 2021/1
Y1 - 2021/1
N2 - The oblique scanning of a rectangular array of ultraviolet (UV) spots provides a feasible means of realizing maskless lithography with well-controlled UV exposure. In such a method, the UV light is modulated by a digital micromirror device (DMD), collected by a microlens/pinhole array, and then projected onto a photoresist (PR) layer for UV patterning. However, the strict requirements imposed on the optical distortion of the image projection system pose a significant technical challenge. Accordingly, the present study proposes a method for improving the UV patterning accuracy by using an empirically-derived distortion model to adjust the working DMD images. The patterning errors caused by optical distortion are then further reduced by adjusting the tilt angle of the oblique scanning process. The experimental results show that the proposed method yields a significant reduction in the UV patterning error. Consequently, it provides a practical solution for performing maskless lithography without the need for a high-quality image projection lens system.
AB - The oblique scanning of a rectangular array of ultraviolet (UV) spots provides a feasible means of realizing maskless lithography with well-controlled UV exposure. In such a method, the UV light is modulated by a digital micromirror device (DMD), collected by a microlens/pinhole array, and then projected onto a photoresist (PR) layer for UV patterning. However, the strict requirements imposed on the optical distortion of the image projection system pose a significant technical challenge. Accordingly, the present study proposes a method for improving the UV patterning accuracy by using an empirically-derived distortion model to adjust the working DMD images. The patterning errors caused by optical distortion are then further reduced by adjusting the tilt angle of the oblique scanning process. The experimental results show that the proposed method yields a significant reduction in the UV patterning error. Consequently, it provides a practical solution for performing maskless lithography without the need for a high-quality image projection lens system.
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U2 - 10.1016/j.optlaseng.2020.106313
DO - 10.1016/j.optlaseng.2020.106313
M3 - Article
AN - SCOPUS:85088856362
VL - 136
JO - Optics and Lasers in Engineering
JF - Optics and Lasers in Engineering
SN - 0143-8166
M1 - 106313
ER -