A fluxless wave soldering process was attempted for producing solder bumps of 100 μm × 100 μm, on silicon wafers containing 8 × 8 chips with 20 × 20 bumps on each chip. The solder bump structure, Al/Mo,(Mo-N)/Pd/Pb-Sn, was produced by fluxless wave soldering. The sputtering deposited Mo or Mo-N film was applied as a diffusion barrier between Al and solder. The Pd layer, also produced by sputtering deposition, was applied for wetting purposes. Interactions between materials during wave soldering and subsequent heat treatment of this structure were investigated. The interactions, investigated using SEM and XRD, within the multilayers occured rapidly between Pd and solder elements during wave soldering.
|Number of pages||5|
|Journal||IEEE Transactions on Components Packaging and Manufacturing Technology Part B|
|Publication status||Published - 1998 Feb|
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