Materials interaction between inherent barrier Pb-free Sn-Zn-Al solder and Cu contact

Kwang-Lung Lin, Hui Min Hsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The Pb-free Sn-Zn-Al solder was dip coated on Cu contact to investigate the interaction between them under aging at 150°C for up to 1000 hours. The results of EMPA analysis indicate that Al gathers at the Cu/solder interface and inhibits the interdiffusion between Cu and Sn. This solder itself provides diffusion barrier for Cu contact and thus is termed Inherent Barrier Solder. Cu was found to be able to diffuse to solder at long term heat treatment but not Sn. Nevertheless, Cu was not found to form any compund with Sn in this study. The as dipped solder reacts with Cu to form Al4.2Cu3.2Zn0.7 compound. The high temperature heat treatment transforms the compound to Cu5Zn8, Al4Cu9 in heating duration up to 400 hours. The final product is Cu5Zn8 after 600 hours of aging.

Original languageEnglish
Title of host publicationInternational Symposium on Electronic Materials and Packaging, EMAP 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages378-382
Number of pages5
ISBN (Electronic)0780366549, 9780780366541
DOIs
Publication statusPublished - 2000 Jan 1
EventInternational Symposium on Electronic Materials and Packaging, EMAP 2000 - Hong Kong, China
Duration: 2000 Nov 302000 Dec 2

Publication series

NameInternational Symposium on Electronic Materials and Packaging, EMAP 2000

Other

OtherInternational Symposium on Electronic Materials and Packaging, EMAP 2000
CountryChina
CityHong Kong
Period00-11-3000-12-02

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Materials interaction between inherent barrier Pb-free Sn-Zn-Al solder and Cu contact'. Together they form a unique fingerprint.

  • Cite this

    Lin, K-L., & Hsu, H. M. (2000). Materials interaction between inherent barrier Pb-free Sn-Zn-Al solder and Cu contact. In International Symposium on Electronic Materials and Packaging, EMAP 2000 (pp. 378-382). [904183] (International Symposium on Electronic Materials and Packaging, EMAP 2000). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EMAP.2000.904183