Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips

Chwan Ying Lee, Kwang-Lung Lin

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.

Original languageEnglish
Pages (from-to)63-75
Number of pages13
JournalThin Solid Films
Volume229
Issue number1
DOIs
Publication statusPublished - 1993 Jun 5

Fingerprint

solders
Soldering alloys
Deposits
deposits
chips
Boron
Diffusion barriers
interactions
boron
Tin
Aluminum
dipping
Phosphorus
phosphorus
tin
Microscopic examination
heat treatment
Heat treatment
microscopy
aluminum

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{39b6e5f48642469e9527cccd5b03a4c3,
title = "Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips",
abstract = "Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.{\%}. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.",
author = "Lee, {Chwan Ying} and Kwang-Lung Lin",
year = "1993",
month = "6",
day = "5",
doi = "10.1016/0040-6090(93)90411-H",
language = "English",
volume = "229",
pages = "63--75",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1",

}

Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips. / Lee, Chwan Ying; Lin, Kwang-Lung.

In: Thin Solid Films, Vol. 229, No. 1, 05.06.1993, p. 63-75.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips

AU - Lee, Chwan Ying

AU - Lin, Kwang-Lung

PY - 1993/6/5

Y1 - 1993/6/5

N2 - Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.

AB - Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.

UR - http://www.scopus.com/inward/record.url?scp=0027909411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027909411&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(93)90411-H

DO - 10.1016/0040-6090(93)90411-H

M3 - Article

VL - 229

SP - 63

EP - 75

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1

ER -