Abstract
Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.
| Original language | English |
|---|---|
| Pages (from-to) | 63-75 |
| Number of pages | 13 |
| Journal | Thin Solid Films |
| Volume | 229 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1993 Jun 5 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
}
Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips. / Lee, Chwan Ying; Lin, Kwang-Lung.
In: Thin Solid Films, Vol. 229, No. 1, 05.06.1993, p. 63-75.Research output: Contribution to journal › Article
TY - JOUR
T1 - Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips
AU - Lee, Chwan Ying
AU - Lin, Kwang-Lung
PY - 1993/6/5
Y1 - 1993/6/5
N2 - Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.
AB - Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.
UR - http://www.scopus.com/inward/record.url?scp=0027909411&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027909411&partnerID=8YFLogxK
U2 - 10.1016/0040-6090(93)90411-H
DO - 10.1016/0040-6090(93)90411-H
M3 - Article
VL - 229
SP - 63
EP - 75
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1
ER -