Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips

Chwan Ying Lee; Kwang Lung Lin

doi:10.1016/0040-6090(93)90411-H

Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips

Chwan Ying Lee, Kwang Lung Lin

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni₃Sn₄ is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.

Original language	English
Pages (from-to)	63-75
Number of pages	13
Journal	Thin Solid Films
Volume	229
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(93)90411-H
Publication status	Published - 1993 Jun 5

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(93)90411-H

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title = "Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips",

abstract = "Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.",

author = "Lee, {Chwan Ying} and Lin, {Kwang Lung}",

note = "Funding Information: The financial support of the present work by the National Science Council of Republic of China under NSC 81-0404-E006-110 is gratefully acknowledged.",

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T1 - Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips

AU - Lee, Chwan Ying

AU - Lin, Kwang Lung

N1 - Funding Information: The financial support of the present work by the National Science Council of Republic of China under NSC 81-0404-E006-110 is gratefully acknowledged.

PY - 1993/6/5

Y1 - 1993/6/5

N2 - Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.

AB - Electroless deposits NiP and NiB were investigated for their feasibility as a diffusion barrier between solder and Al pad. Solder was selectively deposited on the aluminum pad by dipping. With the aid of scanning Auger microscopy (SAM) and X-ray diffraction (XRD), it was found that Ni3Sn4 is the only phase formed between the electroless NiP or NiB deposit and the solder after heat treatment. The phosphorus content of the electroless NiP deposit did not tend to affect the barrier performance of the deposit. However, the electroless NiB deposit is effective as a diffusion barrier only when the boron content is less than 3 wt.%. The tin of the solder can penetrate the electroless NiB layer at higher boron contents.

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Materials interaction in PbSn/NiP/Al and PbSn/NiB/Al solder bumps on chips

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