Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy

Tzer En Nee, Nien Tze Yeh, Jen Inn Chyi, Ching-Ting Lee

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

Original languageEnglish
Pages (from-to)1331-1334
Number of pages4
JournalSolid-State Electronics
Volume42
Issue number7-8
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Molecular beam epitaxy
Semiconductor quantum dots
Photoluminescence
molecular beam epitaxy
quantum dots
photoluminescence
matrices
activation energy
Activation energy
matrix materials
Defect density
Atomic force microscopy
atomic force microscopy
defects
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Nee, Tzer En ; Yeh, Nien Tze ; Chyi, Jen Inn ; Lee, Ching-Ting. / Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy. In: Solid-State Electronics. 1998 ; Vol. 42, No. 7-8. pp. 1331-1334.
@article{c658eac03da9493882deca33515a9441,
title = "Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy",
abstract = "The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.",
author = "Nee, {Tzer En} and Yeh, {Nien Tze} and Chyi, {Jen Inn} and Ching-Ting Lee",
year = "1998",
month = "1",
day = "1",
doi = "10.1016/S0038-1101(98)00026-4",
language = "English",
volume = "42",
pages = "1331--1334",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "7-8",

}

Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy. / Nee, Tzer En; Yeh, Nien Tze; Chyi, Jen Inn; Lee, Ching-Ting.

In: Solid-State Electronics, Vol. 42, No. 7-8, 01.01.1998, p. 1331-1334.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Matrix-dependent structural and photoluminescence properties of In0.5Ga0.5As quantum dots grown by molecular beam epitaxy

AU - Nee, Tzer En

AU - Yeh, Nien Tze

AU - Chyi, Jen Inn

AU - Lee, Ching-Ting

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

AB - The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

UR - http://www.scopus.com/inward/record.url?scp=0032120014&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032120014&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(98)00026-4

DO - 10.1016/S0038-1101(98)00026-4

M3 - Article

AN - SCOPUS:0032120014

VL - 42

SP - 1331

EP - 1334

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7-8

ER -