The properties of the self-organized In0.5Ga0.5As quantum dots on In0.1Ga0.9As, GaAs, and In0.1A10.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In0.5Ga0.5As quantum dots in In0.1Ga0.9As matrix exhibit higher intensity as compared to those in GaAs and In0.1Al0.9As matrices. It is also found that the activation energy of the In0.5Ga0.5As quantum dots in GaAs matrix is higher than that of the dots in In0.1Ga0.9As matrix. Whereas the quantum dots in In0.1Al0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry