Matrix-dependent structural and photoluminescence properties of In_0.5Ga_0.5As quantum dots grown by molecular beam epitaxy

Engineering & Materials Science

• Photoluminescence 100%
• Molecular beam epitaxy 95%
• Structural properties 66%
• Activation energy 64%
• Defect density 44%
• Atomic force microscopy 39%

Chemical Compounds

• Molecular Beam Epitaxy 88%
• Quantum Dot 54%
• Photoluminescence 47%
• Reaction Activation Energy 17%
• Photoluminescence Spectrum 12%
• Atomic Force Microscopy 9%
• Surface 3%

Physics & Astronomy

• molecular beam epitaxy 52%
• quantum dots 47%
• photoluminescence 43%
• matrices 33%
• activation energy 15%
• matrix materials 12%
• atomic force microscopy 7%
• defects 5%