MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device

Wen Chau Liu, Der Feng Guo, Lih Wen Laih

Research output: Contribution to conferencePaper

Original languageEnglish
DOIs
Publication statusPublished - 1994 Jan 1
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 1994 Jul 121994 Jul 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Liu, W. C., Guo, D. F., & Laih, L. W. (1994). MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device. Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771306