MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device

Wen Chau Liu, Der Feng Guo, Lih Wen Laih

Research output: Contribution to conference › Paper › peer-review

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771306
Publication status	Published - 1994 Jan 1
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

@conference{25c3004e43824e46b91e08854ffc703c,

title = "MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device",

author = "Liu, {Wen Chau} and Guo, {Der Feng} and Laih, {Lih Wen}",

year = "1994",

month = jan,

day = "1",

doi = "10.1109/EDMS.1994.771306",

language = "English",

note = "1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

}

TY - CONF

T1 - MBE grown GaAs-InGaAs quantum-well resonant-Tunneling switching device

AU - Liu, Wen Chau

AU - Guo, Der Feng

AU - Laih, Lih Wen

PY - 1994/1/1

Y1 - 1994/1/1

UR - http://www.scopus.com/inward/record.url?scp=85063569351&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063569351&partnerID=8YFLogxK

U2 - 10.1109/EDMS.1994.771306

DO - 10.1109/EDMS.1994.771306

M3 - Paper

AN - SCOPUS:85063569351

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -