MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

K. F. Yarn; C. Y. Chang; Y. H. Wang; R. L. Wang

doi:10.7567/ssdm.1990.b-2-4

MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

K. F. Yarn, C. Y. Chang, Y. H. Wang, R. L. Wang

Institute of Microelectronics

Research output: Contribution to conference › Paper › peer-review

Abstract

A GaAs voltage-controlled negative differential resistance power transistor using n⁺-i-p⁺-i-n⁺ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with V_BE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.

Original language	English
Pages	55-58
Number of pages	4
DOIs	https://doi.org/10.7567/ssdm.1990.b-2-4
Publication status	Published - 1990
Event	22nd International Conference on Solid State Devices and Materials - Sendai, Jpn Duration: 1990 Aug 22 → 1990 Aug 24

Other

Other	22nd International Conference on Solid State Devices and Materials
City	Sendai, Jpn
Period	90-08-22 → 90-08-24

All Science Journal Classification (ASJC) codes

General Engineering

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10.7567/ssdm.1990.b-2-4

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title = "MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor",

abstract = "A GaAs voltage-controlled negative differential resistance power transistor using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.",

author = "Yarn, {K. F.} and Chang, {C. Y.} and Wang, {Y. H.} and Wang, {R. L.}",

year = "1990",

doi = "10.7567/ssdm.1990.b-2-4",

language = "English",

pages = "55--58",

note = "22nd International Conference on Solid State Devices and Materials ; Conference date: 22-08-1990 Through 24-08-1990",

}

TY - CONF

T1 - MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

AU - Yarn, K. F.

AU - Chang, C. Y.

AU - Wang, Y. H.

AU - Wang, R. L.

PY - 1990

Y1 - 1990

N2 - A GaAs voltage-controlled negative differential resistance power transistor using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.

AB - A GaAs voltage-controlled negative differential resistance power transistor using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.

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U2 - 10.7567/ssdm.1990.b-2-4

DO - 10.7567/ssdm.1990.b-2-4

M3 - Paper

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SP - 55

EP - 58

T2 - 22nd International Conference on Solid State Devices and Materials

Y2 - 22 August 1990 through 24 August 1990

ER -

MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

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