A GaAs voltage-controlled negative differential resistance power transistor using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.
|Number of pages||4|
|Publication status||Published - 1990 Dec 1|
|Event||22nd International Conference on Solid State Devices and Materials - Sendai, Jpn|
Duration: 1990 Aug 22 → 1990 Aug 24
|Other||22nd International Conference on Solid State Devices and Materials|
|Period||90-08-22 → 90-08-24|
All Science Journal Classification (ASJC) codes