MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor

K. F. Yarn, C. Y. Chang, Yeong-Her Wang, R. L. Wang

Research output: Contribution to conferencePaper

Abstract

A GaAs voltage-controlled negative differential resistance power transistor using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.

Original languageEnglish
Pages55-58
Number of pages4
Publication statusPublished - 1990 Dec 1
Event22nd International Conference on Solid State Devices and Materials - Sendai, Jpn
Duration: 1990 Aug 221990 Aug 24

Other

Other22nd International Conference on Solid State Devices and Materials
CitySendai, Jpn
Period90-08-2290-08-24

Fingerprint

Resonant tunneling
Hot electrons
Molecular beam epitaxy
Transistors
Current density
Electric potential
Temperature
Power transistors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yarn, K. F., Chang, C. Y., Wang, Y-H., & Wang, R. L. (1990). MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor. 55-58. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .
Yarn, K. F. ; Chang, C. Y. ; Wang, Yeong-Her ; Wang, R. L. / MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .4 p.
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Yarn, KF, Chang, CY, Wang, Y-H & Wang, RL 1990, 'MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor' Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, 90-08-22 - 90-08-24, pp. 55-58.

MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor. / Yarn, K. F.; Chang, C. Y.; Wang, Yeong-Her; Wang, R. L.

1990. 55-58 Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .

Research output: Contribution to conferencePaper

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N2 - A GaAs voltage-controlled negative differential resistance power transistor using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.

AB - A GaAs voltage-controlled negative differential resistance power transistor using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE) are presented. The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with VBE=0.5V at room temperature has been obtained. This is proposed to be due to the bipolar-unipolar transition reaction. For power consideration, it can be compared with resonant tunneling hot electron transistors.

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Yarn KF, Chang CY, Wang Y-H, Wang RL. MBE-grown GaAs voltage-controlled bipolar-unipolar transition negative differential resistance power transistor. 1990. Paper presented at 22nd International Conference on Solid State Devices and Materials, Sendai, Jpn, .