MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

Y. C. Chang; Y. J. Lee; Y. N. Chiu; T. D. Lin; S. Y. Wu; H. C. Chiu; J. Kwo; Y. H. Wang; M. Hong

doi:10.1016/j.jcrysgro.2006.11.259

MBE grown high κ dielectrics Ga₂O₃(Gd₂O₃) on GaN

Y. C. Chang, Y. J. Lee, Y. N. Chiu, T. D. Lin, S. Y. Wu, H. C. Chiu, J. Kwo, Y. H. Wang, M. Hong

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

High κ Ga₂O₃(Gd₂O₃) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga₂O₃(Gd₂O₃)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10^-8 A/cm²), and a low interfacial density of states (D_it) of 10¹¹ cm^-2 eV^-1 at the midgap. Well-behaved capacitance-voltage (C{single bond}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C{single bond}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).

Original language	English
Pages (from-to)	390-393
Number of pages	4
Journal	Journal of Crystal Growth
Volume	301-302
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.259
Publication status	Published - 2007 Apr

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.11.259

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@article{23637ebe2d2f4212a8897f30e636475a,

title = "MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN",

abstract = "High κ Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10-8 A/cm2), and a low interfacial density of states (Dit) of 1011 cm-2 eV-1 at the midgap. Well-behaved capacitance-voltage (C{single bond}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C{single bond}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).",

author = "Chang, {Y. C.} and Lee, {Y. J.} and Chiu, {Y. N.} and Lin, {T. D.} and Wu, {S. Y.} and Chiu, {H. C.} and J. Kwo and Wang, {Y. H.} and M. Hong",

note = "Funding Information: We wish to acknowledge the support from Department of Natural Sciences at National Science Council (under Grants of NSC-94-2120-M-007-008 and NSC-94-2120- M-007-009), and Center for Nano Science and Technology National Chiao Tung University, Taiwan, Republic of China.",

year = "2007",

month = apr,

doi = "10.1016/j.jcrysgro.2006.11.259",

language = "English",

volume = "301-302",

pages = "390--393",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

AU - Chang, Y. C.

AU - Lee, Y. J.

AU - Chiu, Y. N.

AU - Lin, T. D.

AU - Wu, S. Y.

AU - Chiu, H. C.

AU - Kwo, J.

AU - Wang, Y. H.

AU - Hong, M.

N1 - Funding Information: We wish to acknowledge the support from Department of Natural Sciences at National Science Council (under Grants of NSC-94-2120-M-007-008 and NSC-94-2120- M-007-009), and Center for Nano Science and Technology National Chiao Tung University, Taiwan, Republic of China.

PY - 2007/4

Y1 - 2007/4

N2 - High κ Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10-8 A/cm2), and a low interfacial density of states (Dit) of 1011 cm-2 eV-1 at the midgap. Well-behaved capacitance-voltage (C{single bond}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C{single bond}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).

AB - High κ Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10-8 A/cm2), and a low interfacial density of states (Dit) of 1011 cm-2 eV-1 at the midgap. Well-behaved capacitance-voltage (C{single bond}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C{single bond}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).

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U2 - 10.1016/j.jcrysgro.2006.11.259

DO - 10.1016/j.jcrysgro.2006.11.259

M3 - Article

AN - SCOPUS:33947318784

SN - 0022-0248

VL - 301-302

SP - 390

EP - 393

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS.

ER -

MBE grown high κ dielectrics Ga₂O₃(Gd₂O₃) on GaN

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