MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

Y. C. Chang; Y. J. Lee; Y. N. Chiu; T. D. Lin; S. Y. Wu; H. C. Chiu; J. Kwo; Y. H. Wang; M. Hong

doi:10.1016/j.jcrysgro.2006.11.259

MBE grown high κ dielectrics Ga₂O₃(Gd₂O₃) on GaN

Y. C. Chang
, Y. J. Lee
, Y. N. Chiu
, T. D. Lin
, S. Y. Wu
, H. C. Chiu
, J. Kwo
, Y. H. Wang
, M. Hong

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

High κ Ga₂O₃(Gd₂O₃) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga₂O₃(Gd₂O₃)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10^-8 A/cm²), and a low interfacial density of states (D_it) of 10¹¹ cm^-2 eV^-1 at the midgap. Well-behaved capacitance-voltage (C{single bond}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C{single bond}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).

Original language	English
Pages (from-to)	390-393
Number of pages	4
Journal	Journal of Crystal Growth
Volume	301-302
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.11.259
Publication status	Published - 2007 Apr

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2006.11.259

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@article{23637ebe2d2f4212a8897f30e636475a,

title = "MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN",

abstract = "High κ Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10-8 A/cm2), and a low interfacial density of states (Dit) of 1011 cm-2 eV-1 at the midgap. Well-behaved capacitance-voltage (C\{single bond\}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C\{single bond\}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).",

author = "Chang, \{Y. C.\} and Lee, \{Y. J.\} and Chiu, \{Y. N.\} and Lin, \{T. D.\} and Wu, \{S. Y.\} and Chiu, \{H. C.\} and J. Kwo and Wang, \{Y. H.\} and M. Hong",

note = "Funding Information: We wish to acknowledge the support from Department of Natural Sciences at National Science Council (under Grants of NSC-94-2120-M-007-008 and NSC-94-2120- M-007-009), and Center for Nano Science and Technology National Chiao Tung University, Taiwan, Republic of China.",

year = "2007",

month = apr,

doi = "10.1016/j.jcrysgro.2006.11.259",

language = "English",

volume = "301-302",

pages = "390--393",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - MBE grown high κ dielectrics Ga2O3(Gd2O3) on GaN

AU - Chang, Y. C.

AU - Lee, Y. J.

AU - Chiu, Y. N.

AU - Lin, T. D.

AU - Wu, S. Y.

AU - Chiu, H. C.

AU - Kwo, J.

AU - Wang, Y. H.

AU - Hong, M.

N1 - Funding Information: We wish to acknowledge the support from Department of Natural Sciences at National Science Council (under Grants of NSC-94-2120-M-007-008 and NSC-94-2120- M-007-009), and Center for Nano Science and Technology National Chiao Tung University, Taiwan, Republic of China.

PY - 2007/4

Y1 - 2007/4

N2 - High κ Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10-8 A/cm2), and a low interfacial density of states (Dit) of 1011 cm-2 eV-1 at the midgap. Well-behaved capacitance-voltage (C{single bond}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C{single bond}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).

AB - High κ Ga2O3(Gd2O3) dielectric was deposited on n-type GaN (0 0 0 1) using molecular beam epitaxy (MBE). TiN/Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor (MOS) diodes have exhibited a negligible frequency dispersion, low leakage currents (∼10-8 A/cm2), and a low interfacial density of states (Dit) of 1011 cm-2 eV-1 at the midgap. Well-behaved capacitance-voltage (C{single bond}V) curves with accumulation and depletion behaviors were shown, with a dielectric constant of 14.7. Forming gas annealing at 600 °C has reduced the frequency dispersion in the C{single bond}V curves. A sharp oxide/semiconductor interface was shown by high-resolution transmission electron microscopy (HR-TEM).

UR - https://www.scopus.com/pages/publications/33947318784

UR - https://www.scopus.com/pages/publications/33947318784#tab=citedBy

U2 - 10.1016/j.jcrysgro.2006.11.259

DO - 10.1016/j.jcrysgro.2006.11.259

M3 - Article

AN - SCOPUS:33947318784

SN - 0022-0248

VL - 301-302

SP - 390

EP - 393

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - SPEC. ISS.

ER -

MBE grown high κ dielectrics Ga₂O₃(Gd₂O₃) on GaN

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