MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor

C. Y. Chang, Y. H. Wang, W. C. Liu, S. A. Liao

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.

Original languageEnglish
Pages (from-to)123-125
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 1985 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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