Abstract
The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.
| Original language | English |
|---|---|
| Pages (from-to) | 123-125 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 6 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1985 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
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MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor. / Chang, C. Y.; Wang, Yeong-Her; Liu, Wen-Chau; Liao, S. A.
In: IEEE Electron Device Letters, Vol. 6, No. 3, 01.01.1985, p. 123-125.Research output: Contribution to journal › Article
TY - JOUR
T1 - MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor
AU - Chang, C. Y.
AU - Wang, Yeong-Her
AU - Liu, Wen-Chau
AU - Liao, S. A.
PY - 1985/1/1
Y1 - 1985/1/1
N2 - The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.
AB - The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.
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U2 - 10.1109/EDL.1985.26067
DO - 10.1109/EDL.1985.26067
M3 - Article
VL - 6
SP - 123
EP - 125
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 3
ER -