The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering