MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor

C. Y. Chang; Y. H. Wang; W. C. Liu; S. A. Liao

doi:10.1109/EDL.1985.26067

MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor

C. Y. Chang, Y. H. Wang, W. C. Liu, S. A. Liao

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.

Original language	English
Pages (from-to)	123-125
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	6
Issue number	3
DOIs	https://doi.org/10.1109/EDL.1985.26067
Publication status	Published - 1985 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor",

abstract = "The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.",

author = "Chang, {C. Y.} and Wang, {Y. H.} and Liu, {W. C.} and Liao, {S. A.}",

year = "1985",

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AU - Chang, C. Y.

AU - Wang, Y. H.

AU - Liu, W. C.

AU - Liao, S. A.

PY - 1985/3

Y1 - 1985/3

N2 - The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.

AB - The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.

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