MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor

C. Y. Chang, Yeong-Her Wang, Wen-Chau Liu, S. A. Liao

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.

Original languageEnglish
Pages (from-to)123-125
Number of pages3
JournalIEEE Electron Device Letters
Volume6
Issue number3
DOIs
Publication statusPublished - 1985 Jan 1

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Thermionic emission
Aluminum
Molecular beam epitaxy
Transistors
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "The three-terminal n+-i-δ(p +)-i-n + V-groove barrier transistor (VBT) has been successfully fabricated by molecular beam epitaxy (MBE). The base terminal is connected to the 5(p-), the thin p + layer, by depositing aluminum on the etched V-groove. The demonstrated device possesses high potential of Ultrahigh-frequency (f τ> 30-GHz), high-power, and low-noise capability due to carriers transporting by thermionic emission and being controlled by the base-emitter bias.",
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MBE Grown n+-i-δ(p+)-i-n+ GaAs V-Groove Barrier Transistor. / Chang, C. Y.; Wang, Yeong-Her; Liu, Wen-Chau; Liao, S. A.

In: IEEE Electron Device Letters, Vol. 6, No. 3, 01.01.1985, p. 123-125.

Research output: Contribution to journalArticle

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