MBE GROWN n** plus -i- delta (p** plus )-i-n** plus GaAs U-GROOVE BARRIER TRANSISTORS.

C. Y. Chang, Wen-Chau Liu, S. A. Liao, Yeong-Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAs n** plus -i- delta (p** plus )-i-n** plus bulk barrier transistors with ultra thin base (about 100 A) were prepared by molecular beam epitaxy. The current transport over the potential barrier is dominated by thermionic emission. It is a voltage-controlled device in which the barrier and current can be directly controlled by the applied base bias. The current-voltage characteristics are similar to those of triodes or static induction transistors. The devices possess the capability of high frequency response (f//T greater than equivalent to 30 GHz), high power and low noise. The barrier height can also be modulated by the light intensity.

Original languageEnglish
Title of host publicationInstitute of Physics Conference Series
Pages643-648
Number of pages6
Edition79
Publication statusPublished - 1986 Dec 1

Publication series

NameInstitute of Physics Conference Series
Number79
ISSN (Print)0373-0751

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'MBE GROWN n** plus -i- delta (p** plus )-i-n** plus GaAs U-GROOVE BARRIER TRANSISTORS.'. Together they form a unique fingerprint.

Cite this