MBE grown type-II MWIR and LWIR superlattice photodiodes

Cory J. Hill, Jian V. Li, Jason M. Mumolo, Sarath D. Gunapala

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption 2-5 μm and 8-12 μm bands. Recent LWIR devices have produced detectivities as high as 8 × 1010 Jones with a differential resistance-area product greater than 6 Ohm cm2 at 80 K with a long wavelength cutoff of approximately 12 μm. The measured internal quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11 μm range. MWIR devices have produced detectivities as high as 8 × 1013 Jones with a differential resistance-area product greater than 3 × 107 Ohm cm2 at 80 K with a long wavelength cutoff of approximately 3.7 μm. The measured internal quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2-3 μm range at low temperature and increases to over 60% near room temperature.

Original languageEnglish
Pages (from-to)187-190
Number of pages4
JournalInfrared Physics and Technology
Volume50
Issue number2-3
DOIs
Publication statusPublished - 2007 Apr 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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