@inproceedings{913e970aff91405b8cfc042e92dc111d,
title = "MBE grown type-II superlattice photodiodes for MWIR and LWIR imaging applications",
abstract = "We report on the status of GaSb/InAs type-II superlattice diodes grown by molecular beam epitaxy (MBE) and designed for infrared absorption in the 2-5 μn and 8-12 μn bands. Recent LWIR devices have produced detectivities as high as 8×10 10 Jones with a differential resistance-area product greater than 6 Ohmcm 2 at 80K with a long wavelength cutoff of approximately 12 μn. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11 μn range. MWIR devices have produced detectivities as high as 8×10 13 Jones with a differential resistance-area product greater than 3×10 7 Ohmcm 2 at 80K with a long wavelength cutoff of approximately 3.7μm. The measured quantum efficiency of these front-side illuminated MWIR devices is close to 40% in the 2-3 μn range at low temperature and increases to over 60% near room temperature. Initial results on SiO 2 and epitaxial-regrowth based passivation techniques are also presented.",
author = "Hill, {Cory J.} and Li, {Jian V.} and Mumolo, {Jason M.} and Gunapala, {Sarath D.} and Rhiger, {David R.} and Kvaas, {Robert E.} and Harris, {Sean F.}",
year = "2007",
doi = "10.1117/12.721330",
language = "English",
isbn = "0819466646",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
number = "I",
booktitle = "Infrared Technology and Applications XXXIII",
edition = "I",
note = "Infrared Technology and Applications XXXIII ; Conference date: 09-04-2007 Through 13-04-2007",
}