MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications

W. C. Liu, W. C. Hsu, W. S. Lour, R. L. Wang, R. L. Chang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A new power FET with a hybrid (MESFET and MD) operation mechanism has been fabricated successfully. The insertion of a modulation-doped (MD) structure between the AlGaAs buffer and GaAs active layer gives high output current and high transconductance. By reducing the gate length to 1 µm, transconductance of up to 340 mS/mm can be expected. Furthermore, the use of an undoped AlGaAs/GaAs superlattice “gate insulator” provides low leakage current and much higher gate breakdown voltage (>30 V). From the experimental results, it is obvious that the proposed structure is suitable for high power applications.

Original languageEnglish
Pages (from-to)L904-L906
JournalJapanese Journal of Applied Physics
Volume28
Issue number6A
DOIs
Publication statusPublished - 1989 Jun

Fingerprint

Transconductance
Molecular beam epitaxy
field effect transistors
buffers
Modulation
transconductance
modulation
aluminum gallium arsenides
Electric breakdown
Leakage currents
electrical faults
insertion
leakage
insulators
output
Power field effect transistors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications",
abstract = "A new power FET with a hybrid (MESFET and MD) operation mechanism has been fabricated successfully. The insertion of a modulation-doped (MD) structure between the AlGaAs buffer and GaAs active layer gives high output current and high transconductance. By reducing the gate length to 1 µm, transconductance of up to 340 mS/mm can be expected. Furthermore, the use of an undoped AlGaAs/GaAs superlattice “gate insulator” provides low leakage current and much higher gate breakdown voltage (>30 V). From the experimental results, it is obvious that the proposed structure is suitable for high power applications.",
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MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications. / Liu, W. C.; Hsu, W. C.; Lour, W. S.; Wang, R. L.; Chang, R. L.

In: Japanese Journal of Applied Physics, Vol. 28, No. 6A, 06.1989, p. L904-L906.

Research output: Contribution to journalArticle

TY - JOUR

T1 - MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications

AU - Liu, W. C.

AU - Hsu, W. C.

AU - Lour, W. S.

AU - Wang, R. L.

AU - Chang, R. L.

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AB - A new power FET with a hybrid (MESFET and MD) operation mechanism has been fabricated successfully. The insertion of a modulation-doped (MD) structure between the AlGaAs buffer and GaAs active layer gives high output current and high transconductance. By reducing the gate length to 1 µm, transconductance of up to 340 mS/mm can be expected. Furthermore, the use of an undoped AlGaAs/GaAs superlattice “gate insulator” provides low leakage current and much higher gate breakdown voltage (>30 V). From the experimental results, it is obvious that the proposed structure is suitable for high power applications.

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