TY - JOUR
T1 - MBE grown undoped superlattice gate and modulation-doped buffer structure for power FET applications
AU - Liu, W. C.
AU - Hsu, W. C.
AU - Lour, W. S.
AU - Wang, R. L.
AU - Chang, R. L.
PY - 1989/6
Y1 - 1989/6
N2 - A new power FET with a hybrid (MESFET and MD) operation mechanism has been fabricated successfully. The insertion of a modulation-doped (MD) structure between the AlGaAs buffer and GaAs active layer gives high output current and high transconductance. By reducing the gate length to 1 µm, transconductance of up to 340 mS/mm can be expected. Furthermore, the use of an undoped AlGaAs/GaAs superlattice “gate insulator” provides low leakage current and much higher gate breakdown voltage (>30 V). From the experimental results, it is obvious that the proposed structure is suitable for high power applications.
AB - A new power FET with a hybrid (MESFET and MD) operation mechanism has been fabricated successfully. The insertion of a modulation-doped (MD) structure between the AlGaAs buffer and GaAs active layer gives high output current and high transconductance. By reducing the gate length to 1 µm, transconductance of up to 340 mS/mm can be expected. Furthermore, the use of an undoped AlGaAs/GaAs superlattice “gate insulator” provides low leakage current and much higher gate breakdown voltage (>30 V). From the experimental results, it is obvious that the proposed structure is suitable for high power applications.
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U2 - 10.1143/JJAP.28.L904
DO - 10.1143/JJAP.28.L904
M3 - Article
AN - SCOPUS:0024681779
SN - 0021-4922
VL - 28
SP - L904-L906
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 6A
ER -