Measured minority-carrier lifetime and CIGS device performance

  • Ingrid L. Repins
  • , Wyatt K. Metzger
  • , Craig L. Perkins
  • , Jian V. Li
  • , Miguel A. Contreras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

23 Citations (Scopus)

Abstract

The relationship between lifetime measured by time-resolved photoluminescence on bare CIGS films and subsequent device performance is examined. A correlation between device voltage and lifetime is demonstrated. The effects of measured band gap and carrier density are discussed. Results are compared with fundamental calculations.

Original languageEnglish
Title of host publication2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages978-983
Number of pages6
DOIs
Publication statusPublished - 2009
Event2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States
Duration: 2009 Jun 72009 Jun 12

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/TerritoryUnited States
CityPhiladelphia, PA
Period09-06-0709-06-12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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