Abstract
Microwave dielectric properties of (Bi1.5Zn1.0Nb 1.5)O7/MgO (BiZN/MgO) thin films were measured at 2.85 GHz by an evanescent microwave probe (EMP) technique. This is the first time that the dielectric properties of a thin film have been characterized in the microwave frequency region. The dielectric constant of the BiZN/MgO films increases with the deposition temperature, which is apparently due to the increase in crystallinity and the change in the preferred orientation of the films. High-resolution EMP measurement reveals that the films consist of ultrasmall grains about 0.4/zm in diameter. The dielectric constant (K) of BiZN/MgO films is comparable to that of the BiZN bulk materials, whereas the loss factor (tan S) of the films is markedly larger than that of the ceramics.
Original language | English |
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Pages (from-to) | 7214-7217 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics |
Volume | 41 |
Issue number | 11 B |
DOIs | |
Publication status | Published - 2002 Nov |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)