Measurement of Dielectric Property by Evanescent Microwave Microscope

Yi Chun Chen; Hsiu Fung Cheng; Gang Wang; Xiao Dong Xiang; Chien Ming Lei; I. Nan Lin

doi:10.1143/JJAP.41.7214

Measurement of Dielectric Property by Evanescent Microwave Microscope

Yi Chun Chen, Hsiu Fung Cheng, Gang Wang, Xiao Dong Xiang, Chien Ming Lei, I. Nan Lin

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Microwave dielectric properties of (Bi_1.5Zn_1.0Nb _1.5)O₇/MgO (BiZN/MgO) thin films were measured at 2.85 GHz by an evanescent microwave probe (EMP) technique. This is the first time that the dielectric properties of a thin film have been characterized in the microwave frequency region. The dielectric constant of the BiZN/MgO films increases with the deposition temperature, which is apparently due to the increase in crystallinity and the change in the preferred orientation of the films. High-resolution EMP measurement reveals that the films consist of ultrasmall grains about 0.4/zm in diameter. The dielectric constant (K) of BiZN/MgO films is comparable to that of the BiZN bulk materials, whereas the loss factor (tan S) of the films is markedly larger than that of the ceramics.

Original language	English
Pages (from-to)	7214-7217
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.41.7214
Publication status	Published - 2002 Nov

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Measurement of Dielectric Property by Evanescent Microwave Microscope",

abstract = "Microwave dielectric properties of (Bi1.5Zn1.0Nb 1.5)O7/MgO (BiZN/MgO) thin films were measured at 2.85 GHz by an evanescent microwave probe (EMP) technique. This is the first time that the dielectric properties of a thin film have been characterized in the microwave frequency region. The dielectric constant of the BiZN/MgO films increases with the deposition temperature, which is apparently due to the increase in crystallinity and the change in the preferred orientation of the films. High-resolution EMP measurement reveals that the films consist of ultrasmall grains about 0.4/zm in diameter. The dielectric constant (K) of BiZN/MgO films is comparable to that of the BiZN bulk materials, whereas the loss factor (tan S) of the films is markedly larger than that of the ceramics.",

author = "Chen, {Yi Chun} and Cheng, {Hsiu Fung} and Gang Wang and Xiang, {Xiao Dong} and Lei, {Chien Ming} and Lin, {I. Nan}",

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T1 - Measurement of Dielectric Property by Evanescent Microwave Microscope

AU - Chen, Yi Chun

AU - Cheng, Hsiu Fung

AU - Wang, Gang

AU - Xiang, Xiao Dong

AU - Lei, Chien Ming

AU - Lin, I. Nan

PY - 2002/11

Y1 - 2002/11

N2 - Microwave dielectric properties of (Bi1.5Zn1.0Nb 1.5)O7/MgO (BiZN/MgO) thin films were measured at 2.85 GHz by an evanescent microwave probe (EMP) technique. This is the first time that the dielectric properties of a thin film have been characterized in the microwave frequency region. The dielectric constant of the BiZN/MgO films increases with the deposition temperature, which is apparently due to the increase in crystallinity and the change in the preferred orientation of the films. High-resolution EMP measurement reveals that the films consist of ultrasmall grains about 0.4/zm in diameter. The dielectric constant (K) of BiZN/MgO films is comparable to that of the BiZN bulk materials, whereas the loss factor (tan S) of the films is markedly larger than that of the ceramics.

AB - Microwave dielectric properties of (Bi1.5Zn1.0Nb 1.5)O7/MgO (BiZN/MgO) thin films were measured at 2.85 GHz by an evanescent microwave probe (EMP) technique. This is the first time that the dielectric properties of a thin film have been characterized in the microwave frequency region. The dielectric constant of the BiZN/MgO films increases with the deposition temperature, which is apparently due to the increase in crystallinity and the change in the preferred orientation of the films. High-resolution EMP measurement reveals that the films consist of ultrasmall grains about 0.4/zm in diameter. The dielectric constant (K) of BiZN/MgO films is comparable to that of the BiZN bulk materials, whereas the loss factor (tan S) of the films is markedly larger than that of the ceramics.

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Measurement of Dielectric Property by Evanescent Microwave Microscope

Abstract

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