Microwave dielectric properties of (Bi1.5Zn1.0Nb 1.5)O7/MgO (BiZN/MgO) thin films were measured at 2.85 GHz by an evanescent microwave probe (EMP) technique. This is the first time that the dielectric properties of a thin film have been characterized in the microwave frequency region. The dielectric constant of the BiZN/MgO films increases with the deposition temperature, which is apparently due to the increase in crystallinity and the change in the preferred orientation of the films. High-resolution EMP measurement reveals that the films consist of ultrasmall grains about 0.4/zm in diameter. The dielectric constant (K) of BiZN/MgO films is comparable to that of the BiZN bulk materials, whereas the loss factor (tan S) of the films is markedly larger than that of the ceramics.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||11 B|
|Publication status||Published - 2002 Nov|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)