@inproceedings{3ae59fd0aa39488f9f80f51a5b2bd683,
title = "Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques",
abstract = "Germanium enrichment process also known as condensation can be used for the integration of stressors in the fully depleted silicon on insulator technology. Using multi-physics modeling combined with advanced TEM characterization we studied the formation of stressors with condensation. We first observed in blanket 1D structures that the diffusion rate is substantially reduced during Ge condensation compared to the typical diffusion in neutral atmosphere. We postulate this is due to the injection of interstitial at the oxide/SiGe interface and to a reduced stress effect on the kinetics. We then studied self-aligned in plane stressors (SAIPS) formed in the source/drain region using localized Ge condensation. It is shown that the SAIPS methodology almost doubles the channel stress generated by the source drain stressor. Combining improved Si0.65Ge0.35 source/drain stressors with in-situ Si0.79Ge0.21 strained channel allows achieving a stress of-2 GPa in the p-type channel with gate first architecture.",
author = "P. Morin and L. Grenouillet and N. Loubet and A. Pofelski and D. Lu and Q. Liu and E. Augendre and S. Maitrejean and V. Fiori and B. Desalvo and B. Doris and W. Kleemeier",
note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",
year = "2015",
doi = "10.1149/06604.0057ecst",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "57--65",
editor = "Gusev, {E. P.} and Timans, {P. J.} and F. Roozeboom and S. DeGendt and K. Kakushima and V. Narayanan and Z. Karim",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5",
edition = "4",
}