Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques

P. Morin, L. Grenouillet, N. Loubet, A. Pofelski, Darsen Lu, Q. Liu, E. Augendre, S. Maitrejean, V. Fiori, B. Desalvo, B. Doris, W. Kleemeier

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Germanium enrichment process also known as condensation can be used for the integration of stressors in the fully depleted silicon on insulator technology. Using multi-physics modeling combined with advanced TEM characterization we studied the formation of stressors with condensation. We first observed in blanket 1D structures that the diffusion rate is substantially reduced during Ge condensation compared to the typical diffusion in neutral atmosphere. We postulate this is due to the injection of interstitial at the oxide/SiGe interface and to a reduced stress effect on the kinetics. We then studied self-aligned in plane stressors (SAIPS) formed in the source/drain region using localized Ge condensation. It is shown that the SAIPS methodology almost doubles the channel stress generated by the source drain stressor. Combining improved Si0.65Ge0.35 source/drain stressors with in-situ Si0.79Ge0.21 strained channel allows achieving a stress of-2 GPa in the p-type channel with gate first architecture.

Original languageEnglish
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5
EditorsE. P. Gusev, P. J. Timans, F. Roozeboom, S. DeGendt, K. Kakushima, V. Narayanan, Z. Karim
PublisherElectrochemical Society Inc.
Pages57-65
Number of pages9
Edition4
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015 Jan 1
EventSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting - Chicago, United States
Duration: 2015 May 242015 May 28

Publication series

NameECS Transactions
Number4
Volume66
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherSymposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting
CountryUnited States
CityChicago
Period15-05-2415-05-28

Fingerprint

Condensation
Silicon on insulator technology
Germanium
Physics
Transmission electron microscopy
Kinetics
Oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Morin, P., Grenouillet, L., Loubet, N., Pofelski, A., Lu, D., Liu, Q., ... Kleemeier, W. (2015). Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques. In E. P. Gusev, P. J. Timans, F. Roozeboom, S. DeGendt, K. Kakushima, V. Narayanan, & Z. Karim (Eds.), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 (4 ed., pp. 57-65). (ECS Transactions; Vol. 66, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/06604.0057ecst
Morin, P. ; Grenouillet, L. ; Loubet, N. ; Pofelski, A. ; Lu, Darsen ; Liu, Q. ; Augendre, E. ; Maitrejean, S. ; Fiori, V. ; Desalvo, B. ; Doris, B. ; Kleemeier, W. / Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques. Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. editor / E. P. Gusev ; P. J. Timans ; F. Roozeboom ; S. DeGendt ; K. Kakushima ; V. Narayanan ; Z. Karim. 4. ed. Electrochemical Society Inc., 2015. pp. 57-65 (ECS Transactions; 4).
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abstract = "Germanium enrichment process also known as condensation can be used for the integration of stressors in the fully depleted silicon on insulator technology. Using multi-physics modeling combined with advanced TEM characterization we studied the formation of stressors with condensation. We first observed in blanket 1D structures that the diffusion rate is substantially reduced during Ge condensation compared to the typical diffusion in neutral atmosphere. We postulate this is due to the injection of interstitial at the oxide/SiGe interface and to a reduced stress effect on the kinetics. We then studied self-aligned in plane stressors (SAIPS) formed in the source/drain region using localized Ge condensation. It is shown that the SAIPS methodology almost doubles the channel stress generated by the source drain stressor. Combining improved Si0.65Ge0.35 source/drain stressors with in-situ Si0.79Ge0.21 strained channel allows achieving a stress of-2 GPa in the p-type channel with gate first architecture.",
author = "P. Morin and L. Grenouillet and N. Loubet and A. Pofelski and Darsen Lu and Q. Liu and E. Augendre and S. Maitrejean and V. Fiori and B. Desalvo and B. Doris and W. Kleemeier",
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Morin, P, Grenouillet, L, Loubet, N, Pofelski, A, Lu, D, Liu, Q, Augendre, E, Maitrejean, S, Fiori, V, Desalvo, B, Doris, B & Kleemeier, W 2015, Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques. in EP Gusev, PJ Timans, F Roozeboom, S DeGendt, K Kakushima, V Narayanan & Z Karim (eds), Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 edn, ECS Transactions, no. 4, vol. 66, Electrochemical Society Inc., pp. 57-65, Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5 - 227th ECS Meeting, Chicago, United States, 15-05-24. https://doi.org/10.1149/06604.0057ecst

Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques. / Morin, P.; Grenouillet, L.; Loubet, N.; Pofelski, A.; Lu, Darsen; Liu, Q.; Augendre, E.; Maitrejean, S.; Fiori, V.; Desalvo, B.; Doris, B.; Kleemeier, W.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. ed. / E. P. Gusev; P. J. Timans; F. Roozeboom; S. DeGendt; K. Kakushima; V. Narayanan; Z. Karim. 4. ed. Electrochemical Society Inc., 2015. p. 57-65 (ECS Transactions; Vol. 66, No. 4).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Morin, P.

AU - Grenouillet, L.

AU - Loubet, N.

AU - Pofelski, A.

AU - Lu, Darsen

AU - Liu, Q.

AU - Augendre, E.

AU - Maitrejean, S.

AU - Fiori, V.

AU - Desalvo, B.

AU - Doris, B.

AU - Kleemeier, W.

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AB - Germanium enrichment process also known as condensation can be used for the integration of stressors in the fully depleted silicon on insulator technology. Using multi-physics modeling combined with advanced TEM characterization we studied the formation of stressors with condensation. We first observed in blanket 1D structures that the diffusion rate is substantially reduced during Ge condensation compared to the typical diffusion in neutral atmosphere. We postulate this is due to the injection of interstitial at the oxide/SiGe interface and to a reduced stress effect on the kinetics. We then studied self-aligned in plane stressors (SAIPS) formed in the source/drain region using localized Ge condensation. It is shown that the SAIPS methodology almost doubles the channel stress generated by the source drain stressor. Combining improved Si0.65Ge0.35 source/drain stressors with in-situ Si0.79Ge0.21 strained channel allows achieving a stress of-2 GPa in the p-type channel with gate first architecture.

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M3 - Conference contribution

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A2 - Timans, P. J.

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PB - Electrochemical Society Inc.

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Morin P, Grenouillet L, Loubet N, Pofelski A, Lu D, Liu Q et al. Mechanical analyses of extended and localized UTBB stressors formed with Ge enrichment techniques. In Gusev EP, Timans PJ, Roozeboom F, DeGendt S, Kakushima K, Narayanan V, Karim Z, editors, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 5. 4 ed. Electrochemical Society Inc. 2015. p. 57-65. (ECS Transactions; 4). https://doi.org/10.1149/06604.0057ecst