Mechanical properties measurement of PECVD silicon nitride after rapid thermal annealing using nanoindentation technique

H. Y. Yan, K. S. Ou, Kuo-Shen Chen

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper presents the results of mechanical characterisation of residual stress, elastic modulus, hardness and fracture toughness of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films subjected to rapid thermal annealing (RTA), processed between 200 and 800°C. Additional tensile residual stresses were generated during the RTA period and the stress reached peak values after a 400°C RTA process. On the other hand, nanoindentation testing revealed that both the modulus and hardness varied significantly with different RTA temperatures. Finally, the fracture toughness of the nitride was estimated to be 1.33MPa√m based on a series of Vickers micro-indentation tests and it can be enhanced by the RTA process. These results should be useful for microelectromechanical systems (MEMS) or integrated circuit (IC) structure fabrication as regards maintaining the structural integrity and improving fabrication performance.

Original languageEnglish
Pages (from-to)259-266
Number of pages8
JournalStrain
Volume44
Issue number3
DOIs
Publication statusPublished - 2008 Jun 1

Fingerprint

Rapid thermal annealing
Nanoindentation
Silicon nitride
Vapors
Plasmas
Mechanical properties
Fracture toughness
Residual stresses
Hardness
Fabrication
Structural integrity
Indentation
Tensile stress
Nitrides
MEMS
Integrated circuits
Elastic moduli
Testing
Temperature

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{e0d5f542de944b4ab8b36bb47c75d6d0,
title = "Mechanical properties measurement of PECVD silicon nitride after rapid thermal annealing using nanoindentation technique",
abstract = "This paper presents the results of mechanical characterisation of residual stress, elastic modulus, hardness and fracture toughness of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films subjected to rapid thermal annealing (RTA), processed between 200 and 800°C. Additional tensile residual stresses were generated during the RTA period and the stress reached peak values after a 400°C RTA process. On the other hand, nanoindentation testing revealed that both the modulus and hardness varied significantly with different RTA temperatures. Finally, the fracture toughness of the nitride was estimated to be 1.33MPa√m based on a series of Vickers micro-indentation tests and it can be enhanced by the RTA process. These results should be useful for microelectromechanical systems (MEMS) or integrated circuit (IC) structure fabrication as regards maintaining the structural integrity and improving fabrication performance.",
author = "Yan, {H. Y.} and Ou, {K. S.} and Kuo-Shen Chen",
year = "2008",
month = "6",
day = "1",
doi = "10.1111/j.1475-1305.2007.00394.x",
language = "English",
volume = "44",
pages = "259--266",
journal = "Strain",
issn = "0039-2103",
publisher = "Wiley-Blackwell",
number = "3",

}

Mechanical properties measurement of PECVD silicon nitride after rapid thermal annealing using nanoindentation technique. / Yan, H. Y.; Ou, K. S.; Chen, Kuo-Shen.

In: Strain, Vol. 44, No. 3, 01.06.2008, p. 259-266.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Mechanical properties measurement of PECVD silicon nitride after rapid thermal annealing using nanoindentation technique

AU - Yan, H. Y.

AU - Ou, K. S.

AU - Chen, Kuo-Shen

PY - 2008/6/1

Y1 - 2008/6/1

N2 - This paper presents the results of mechanical characterisation of residual stress, elastic modulus, hardness and fracture toughness of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films subjected to rapid thermal annealing (RTA), processed between 200 and 800°C. Additional tensile residual stresses were generated during the RTA period and the stress reached peak values after a 400°C RTA process. On the other hand, nanoindentation testing revealed that both the modulus and hardness varied significantly with different RTA temperatures. Finally, the fracture toughness of the nitride was estimated to be 1.33MPa√m based on a series of Vickers micro-indentation tests and it can be enhanced by the RTA process. These results should be useful for microelectromechanical systems (MEMS) or integrated circuit (IC) structure fabrication as regards maintaining the structural integrity and improving fabrication performance.

AB - This paper presents the results of mechanical characterisation of residual stress, elastic modulus, hardness and fracture toughness of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride films subjected to rapid thermal annealing (RTA), processed between 200 and 800°C. Additional tensile residual stresses were generated during the RTA period and the stress reached peak values after a 400°C RTA process. On the other hand, nanoindentation testing revealed that both the modulus and hardness varied significantly with different RTA temperatures. Finally, the fracture toughness of the nitride was estimated to be 1.33MPa√m based on a series of Vickers micro-indentation tests and it can be enhanced by the RTA process. These results should be useful for microelectromechanical systems (MEMS) or integrated circuit (IC) structure fabrication as regards maintaining the structural integrity and improving fabrication performance.

UR - http://www.scopus.com/inward/record.url?scp=43749087524&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43749087524&partnerID=8YFLogxK

U2 - 10.1111/j.1475-1305.2007.00394.x

DO - 10.1111/j.1475-1305.2007.00394.x

M3 - Article

AN - SCOPUS:43749087524

VL - 44

SP - 259

EP - 266

JO - Strain

JF - Strain

SN - 0039-2103

IS - 3

ER -