Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys

Chih Han Yang; Shiqi Zhou; Hiroshi Nishikawa; Shih Kang Lin

doi:10.23919/ICEP.2018.8374334

Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys

Chih Han Yang, Shiqi Zhou, Hiroshi Nishikawa, Shih Kang Lin

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.

Original language	English
Title of host publication	2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	409-410
Number of pages	2
ISBN (Electronic)	9784990218850
DOIs	https://doi.org/10.23919/ICEP.2018.8374334
Publication status	Published - 2018 Jun 6
Event	2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 - Kuwana, Mie, Japan Duration: 2018 Apr 17 → 2018 Apr 21

Publication series

Name	2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

Other

Other	2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
Country/Territory	Japan
City	Kuwana, Mie
Period	18-04-17 → 18-04-21

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Polymers and Plastics

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10.23919/ICEP.2018.8374334

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Yang, C. H., Zhou, S., Nishikawa, H., & Lin, S. K. (2018). Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. In 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 (pp. 409-410). (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEP.2018.8374334

Yang, Chih Han ; Zhou, Shiqi ; Nishikawa, Hiroshi et al. / Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 409-410 (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018).

@inproceedings{573f0199e0864c4c989c60640008af3a,

title = "Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys",

abstract = "The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.",

author = "Yang, {Chih Han} and Shiqi Zhou and Hiroshi Nishikawa and Lin, {Shih Kang}",

year = "2018",

month = jun,

day = "6",

doi = "10.23919/ICEP.2018.8374334",

language = "English",

series = "2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "409--410",

booktitle = "2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018",

address = "United States",

note = "2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 ; Conference date: 17-04-2018 Through 21-04-2018",

}

Yang, CH, Zhou, S, Nishikawa, H & Lin, SK 2018, Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. in 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018. 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 409-410, 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018, Kuwana, Mie, Japan, 18-04-17. https://doi.org/10.23919/ICEP.2018.8374334

Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. / Yang, Chih Han; Zhou, Shiqi; Nishikawa, Hiroshi et al.
2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 409-410 (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys

AU - Yang, Chih Han

AU - Zhou, Shiqi

AU - Nishikawa, Hiroshi

AU - Lin, Shih Kang

PY - 2018/6/6

Y1 - 2018/6/6

N2 - The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.

AB - The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.

UR - http://www.scopus.com/inward/record.url?scp=85048888420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048888420&partnerID=8YFLogxK

U2 - 10.23919/ICEP.2018.8374334

DO - 10.23919/ICEP.2018.8374334

M3 - Conference contribution

AN - SCOPUS:85048888420

T3 - 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

SP - 409

EP - 410

BT - 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

Y2 - 17 April 2018 through 21 April 2018

ER -

Yang CH, Zhou S, Nishikawa H, Lin SK. Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. In 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 409-410. (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018). doi: 10.23919/ICEP.2018.8374334

Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys

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