Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys

Chih Han Yang, Shiqi Zhou, Hiroshi Nishikawa, Shih-kang Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.

Original languageEnglish
Title of host publication2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages409-410
Number of pages2
ISBN (Electronic)9784990218850
DOIs
Publication statusPublished - 2018 Jun 6
Event2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 - Kuwana, Mie, Japan
Duration: 2018 Apr 172018 Apr 21

Publication series

Name2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

Other

Other2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018
CountryJapan
CityKuwana, Mie
Period18-04-1718-04-21

Fingerprint

Soldering alloys
Melting point
Mechanical properties
Chemical elements
Yield stress
Elongation
Tensile strength
Doping (additives)
Microstructure

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Polymers and Plastics

Cite this

Yang, C. H., Zhou, S., Nishikawa, H., & Lin, S. (2018). Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. In 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018 (pp. 409-410). (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEP.2018.8374334
Yang, Chih Han ; Zhou, Shiqi ; Nishikawa, Hiroshi ; Lin, Shih-kang. / Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 409-410 (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018).
@inproceedings{573f0199e0864c4c989c60640008af3a,
title = "Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys",
abstract = "The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.",
author = "Yang, {Chih Han} and Shiqi Zhou and Hiroshi Nishikawa and Shih-kang Lin",
year = "2018",
month = "6",
day = "6",
doi = "10.23919/ICEP.2018.8374334",
language = "English",
series = "2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "409--410",
booktitle = "2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018",
address = "United States",

}

Yang, CH, Zhou, S, Nishikawa, H & Lin, S 2018, Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. in 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018. 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 409-410, 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018, Kuwana, Mie, Japan, 18-04-17. https://doi.org/10.23919/ICEP.2018.8374334

Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. / Yang, Chih Han; Zhou, Shiqi; Nishikawa, Hiroshi; Lin, Shih-kang.

2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 409-410 (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys

AU - Yang, Chih Han

AU - Zhou, Shiqi

AU - Nishikawa, Hiroshi

AU - Lin, Shih-kang

PY - 2018/6/6

Y1 - 2018/6/6

N2 - The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.

AB - The brittle phase in Sn-58Bi significantly degrades the reliability of electronic products. Doping effective element in Sn-58Bi solder is the common approach for improving the mechanical properties. In this study, the Bi ratio was decreased and minor In were doped depending on CALPHAD results. In addition, minor Ga was doped into the solder and formed the Sn-Bi-In-Ga quaternary system. The microstructure showed the Sn phase proportion was higher than Sn-58Bi solder and it is rich some amount of In and Ga. Moreover, Ga gathered in the micro-Area. In tensile test, the new solder showed high yield strength, tensile strength and much better elongation than Sn-58Bi solder.

UR - http://www.scopus.com/inward/record.url?scp=85048888420&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048888420&partnerID=8YFLogxK

U2 - 10.23919/ICEP.2018.8374334

DO - 10.23919/ICEP.2018.8374334

M3 - Conference contribution

AN - SCOPUS:85048888420

T3 - 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

SP - 409

EP - 410

BT - 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Yang CH, Zhou S, Nishikawa H, Lin S. Mechanical properties of Sn-Bi-In-Ga low melting temperature solder alloys. In 2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 409-410. (2018 International Conference on Electronics Packaging and iMAPS All Asia Conference, ICEP-IAAC 2018). https://doi.org/10.23919/ICEP.2018.8374334