Mechanically controllable nonlinear dielectrics

D. L. Ko, M. F. Tsai, J. W. Chen, P. W. Shao, Y. Z. Tan, J. J. Wang, S. Z. Ho, Y. H. Lai, Y. L. Chueh, Y. C. Chen, D. P. Tsai, L. Q. Chen, Y. H. Chu

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


Strain-sensitive BaxSr1−xTiO3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba0.5Sr0.5TiO3 (BSTO) and ferroelectric BaTiO3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy.

Original languageEnglish
Article numbereaaz3180
JournalScience Advances
Issue number10
Publication statusPublished - 2020

All Science Journal Classification (ASJC) codes

  • General


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