Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors

Jone F. Chen; J. R. Lee; Kuo Ming Wu; Tsung Yi Huang; C. M. Liu

doi:10.1109/TED.2008.924866

Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors

Jone F. Chen, J. R. Lee, Kuo Ming Wu, Tsung Yi Huang, C. M. Liu

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

On-resistance (R_on) degradation induced by avalanche breakdown is investigated in lateral double-diffused MOS transistors with different dosages of n-type drain drift (NDD) region. R_on degradation is caused by interface state and positive oxide-trapped charge created near the drain-side polygate edge. The device with a higher NDD dosage generates less interface state but more positive oxide-trapped charge, leading to a reduction in R_on degradation. Such a result reveals that increasing NDD dosage reduces avalanche-breakdown-induced R_on degradation.

Original language	English
Pages (from-to)	2259-2262
Number of pages	4
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	8
DOIs	https://doi.org/10.1109/TED.2008.924866
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2008.924866

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title = "Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors",

abstract = "On-resistance (Ron) degradation induced by avalanche breakdown is investigated in lateral double-diffused MOS transistors with different dosages of n-type drain drift (NDD) region. Ron degradation is caused by interface state and positive oxide-trapped charge created near the drain-side polygate edge. The device with a higher NDD dosage generates less interface state but more positive oxide-trapped charge, leading to a reduction in Ron degradation. Such a result reveals that increasing NDD dosage reduces avalanche-breakdown-induced Ron degradation.",

author = "Chen, {Jone F.} and Lee, {J. R.} and Wu, {Kuo Ming} and Huang, {Tsung Yi} and Liu, {C. M.}",

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AU - Chen, Jone F.

AU - Lee, J. R.

AU - Wu, Kuo Ming

AU - Huang, Tsung Yi

AU - Liu, C. M.

PY - 2008

Y1 - 2008

N2 - On-resistance (Ron) degradation induced by avalanche breakdown is investigated in lateral double-diffused MOS transistors with different dosages of n-type drain drift (NDD) region. Ron degradation is caused by interface state and positive oxide-trapped charge created near the drain-side polygate edge. The device with a higher NDD dosage generates less interface state but more positive oxide-trapped charge, leading to a reduction in Ron degradation. Such a result reveals that increasing NDD dosage reduces avalanche-breakdown-induced Ron degradation.

AB - On-resistance (Ron) degradation induced by avalanche breakdown is investigated in lateral double-diffused MOS transistors with different dosages of n-type drain drift (NDD) region. Ron degradation is caused by interface state and positive oxide-trapped charge created near the drain-side polygate edge. The device with a higher NDD dosage generates less interface state but more positive oxide-trapped charge, leading to a reduction in Ron degradation. Such a result reveals that increasing NDD dosage reduces avalanche-breakdown-induced Ron degradation.

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Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors

Abstract

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