Mechanism and improvement of on-resistance degradation induced by avalanche breakdown in lateral DMOS transistors

Jone-Fang Chen, J. R. Lee, Kuo Ming Wu, Tsung Yi Huang, C. M. Liu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

On-resistance (Ron) degradation induced by avalanche breakdown is investigated in lateral double-diffused MOS transistors with different dosages of n-type drain drift (NDD) region. Ron degradation is caused by interface state and positive oxide-trapped charge created near the drain-side polygate edge. The device with a higher NDD dosage generates less interface state but more positive oxide-trapped charge, leading to a reduction in Ron degradation. Such a result reveals that increasing NDD dosage reduces avalanche-breakdown-induced Ron degradation.

Original languageEnglish
Pages (from-to)2259-2262
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume55
Issue number8
DOIs
Publication statusPublished - 2008 Aug 18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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