Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Jone F. Chen; Kuen Shiuan Tian; Shiang Yu Chen; J. R. Lee; Kuo Ming Wu; C. M. Liu

doi:10.1063/1.2947588

Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Jone F. Chen, Kuen Shiuan Tian, Shiang Yu Chen, J. R. Lee, Kuo Ming Wu, C. M. Liu

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (I_g) consists mainly of electron injection, I_g correlates well with device degradation. As a result, a lifetime prediction method based on I_g is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.

Original language	English
Article number	243501
Journal	Applied Physics Letters
Volume	92
Issue number	24
DOIs	https://doi.org/10.1063/1.2947588
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2947588

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title = "Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors",

abstract = "The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.",

author = "Chen, {Jone F.} and Tian, {Kuen Shiuan} and Chen, {Shiang Yu} and Lee, {J. R.} and Wu, {Kuo Ming} and Liu, {C. M.}",

year = "2008",

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volume = "92",

journal = "Applied Physics Letters",

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T1 - Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

AU - Chen, Jone F.

AU - Tian, Kuen Shiuan

AU - Chen, Shiang Yu

AU - Lee, J. R.

AU - Wu, Kuo Ming

AU - Liu, C. M.

PY - 2008

Y1 - 2008

N2 - The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.

AB - The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.

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VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243501

ER -

Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

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