Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Jone-Fang Chen, Kuen Shiuan Tian, Shiang Yu Chen, J. R. Lee, Kuo Ming Wu, C. M. Liu

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.

Original languageEnglish
Article number243501
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
Publication statusPublished - 2008 Jun 30

Fingerprint

metal oxide semiconductors
transistors
degradation
life (durability)
predictions
injection
carrier lifetime
hot electrons
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors",
abstract = "The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.",
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Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors. / Chen, Jone-Fang; Tian, Kuen Shiuan; Chen, Shiang Yu; Lee, J. R.; Wu, Kuo Ming; Liu, C. M.

In: Applied Physics Letters, Vol. 92, No. 24, 243501, 30.06.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

AU - Chen, Jone-Fang

AU - Tian, Kuen Shiuan

AU - Chen, Shiang Yu

AU - Lee, J. R.

AU - Wu, Kuo Ming

AU - Liu, C. M.

PY - 2008/6/30

Y1 - 2008/6/30

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AB - The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.

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