Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Jone F. Chen, Kuen Shiuan Tian, Shiang Yu Chen, J. R. Lee, Kuo Ming Wu, C. M. Liu

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.

Original languageEnglish
Article number243501
JournalApplied Physics Letters
Volume92
Issue number24
DOIs
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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