The mechanism of hot-carrier-induced degradation in n -type lateral diffused metal-oxide-semiconductor (LDMOS) transistors is investigated. Experimental data reveal that hot-electron injection induced interface state generation in channel region is the main degradation mechanism. Since gate current (Ig) consists mainly of electron injection, Ig correlates well with device degradation. As a result, a lifetime prediction method based on Ig is presented for the purpose of projecting hot-carrier lifetime in LDMOS transistors.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)