In this study, on-resistance (Ron) degradation induced by hot-carrier injection in n-type lateral diffused metal-oxide-semiconductor transistors with shallow trench isolation (STI) in the drift region is investigated. Ron unexpectedly decreases at the beginning of stress, although Ron increases as the stress time becomes longer. Experimental data and results of technology computer-aided-design simulations reveal that hot-hole injection and trapping at the STI corner closest to the channel is responsible for the Ron reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the Ron increase. An Ron degradation model including the effect of hole trapping and interface trap generation is also discussed and verified with experimental data.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)