Mechanism and modeling of on-resistance degradation in n-type lateral diffused metal-oxide-semiconductor transistors

Jone F. Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, on-resistance (Ron) degradation induced by hot-carrier injection in n-type lateral diffused metal-oxide-semiconductor transistors with shallow trench isolation (STI) in the drift region is investigated. Ron unexpectedly decreases at the beginning of stress, although Ron increases as the stress time becomes longer. Experimental data and results of technology computer-aided-design simulations reveal that hot-hole injection and trapping at the STI corner closest to the channel is responsible for the Ron reduction. The damage caused by hot-electron injection at the STI edge closest to the drain is responsible for the Ron increase. An Ron degradation model including the effect of hole trapping and interface trap generation is also discussed and verified with experimental data.

Original languageEnglish
Article number04C040
JournalJapanese journal of applied physics
Volume48
Issue number4 PART 2
DOIs
Publication statusPublished - 2009 Apr 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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