Mechanism and modeling of on-resistance degradation in n-type lateral diffused metal-oxide-semiconductor transistors

Physics & Astronomy

• metal oxide semiconductors 86%
• isolation 80%
• transistors 67%
• degradation 63%
• trapping 43%
• injection 41%
• carrier injection 33%
• computer aided design 33%
• hot electrons 29%
• traps 20%
• damage 20%
• simulation 10%

Engineering & Materials Science

• Oxide semiconductors 100%
• Transistors 71%
• Electron injection 66%
• Hot electrons 62%
• Degradation 58%
• Hot carriers 56%
• Metals 54%
• Computer aided design 35%