TY - JOUR
T1 - Mechanism and scalability in resistive switching of metal-Pr 0.7Ca 0.3MnO 3 interface
AU - Tsui, S.
AU - Wang, Y. Q.
AU - Xue, Y. Y.
AU - Chu, C. W.
N1 - Funding Information:
The authors thank J. Miller and N. Nawarathna for the use of and technical assistance with the impedance analyzer. The work in Houston is supported in part by NSF Grant No. DMR-9804325, the T. L. L. Temple Foundation, the John J. and Rebecca Moores Endowment, the Robert A. Welch Foundation, and the State of Texas through the Texas Center for Superconductivity at the University of Houston; and at Lawrence Berkeley Laboratory by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098.
PY - 2006
Y1 - 2006
N2 - Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720. The polarity-dependent resistive switching across metal-Pr 0.7Ca 0.3MnO 3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size scalability, may be altered through interface treatments.
AB - Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720. The polarity-dependent resistive switching across metal-Pr 0.7Ca 0.3MnO 3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size scalability, may be altered through interface treatments.
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U2 - 10.1063/1.2349312
DO - 10.1063/1.2349312
M3 - Article
AN - SCOPUS:33748954307
SN - 0003-6951
VL - 89
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 12
M1 - 123502
ER -