Mechanism and scalability in resistive switching of metal-Pr 0.7Ca 0.3MnO 3 interface

S. Tsui, Y. Q. Wang, Y. Y. Xue, C. W. Chu

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720. The polarity-dependent resistive switching across metal-Pr 0.7Ca 0.3MnO 3 interfaces is investigated. The data suggest that shallow defects in the interface dominate the switching. Their density and fluctuation, therefore, will ultimately limit the device size. While the defects generated/annihilated by the pulses and the associated carrier depletion seem to play the major role at lower defect density, the defect correlations and their associated hopping ranges appear to dominate at higher defect density. Therefore, the switching characteristics, especially the size scalability, may be altered through interface treatments.

Original languageEnglish
Article number123502
JournalApplied Physics Letters
Volume89
Issue number12
DOIs
Publication statusPublished - 2006

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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