Mechanism for persistent hexagonal island formation in AlN buffer layer during growth on Si (111) by plasma-assisted molecular beam epitaxy

Kuang Yuan Hsu, Hung Chin Chung, Chuan Pu Liu, Li Wei Tu

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5 Citations (Scopus)

Abstract

The characteristics of structure and morphology of AlN grown by a growth interruption method on Si (111) with plasma-assisted molecular beam epitaxy are investigated. It is found that the growth interruption method would improve the surface flatness of the AlN layer without the formation of Al droplets. However, AlN hexagonal islands were present and persistent throughout the entire growth owing to effective strain relaxation and Eherlich-Schowebel barrier effect of preexistent surface islands grown on higher terraces of the Si substrate. The density of threading dislocations underneath the hexagonal islands is much less than elsewhere in the film, which is presumably due to dislocation annihilation during the island growth process.

Original languageEnglish
Article number211902
JournalApplied Physics Letters
Volume90
Issue number21
DOIs
Publication statusPublished - 2007 Jun 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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