Mechanism investigation of p-i-n ZnO-based light-emitting diodes

Ching Ting Lee, Yung Hao Lin, Li Wen Lai, Li Ren Lou

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Using a cosputtering technique to deposit P-ZnO : AlN film and using a vapor cooling condensation system to deposit n-ZnO:In and i-ZnO films on sapphire substrates, thin-film-type ZnO-based light-emitting diodes (LEDs) were fabricated. A Nd : YAG laser with a wavelength of 413 nm is utilized to identify the defect-related emissions of p-ZnO, i-ZnO, and n-ZnO films. The characteristics of i-ZnO layer of ultraviolet (UV) emissions were analyzed using temperature-dependent photoluminescence. The mechanism of the UV electroluminescence emission peak at 3.20 eV observed from the p-i-n ZnO-based LEDs were attributed to the low deep-level defects and the radiative recombination occurred in the i-ZnO layer.

Original languageEnglish
Article number5313901
Pages (from-to)30-32
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number1
Publication statusPublished - 2010 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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