Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress

D. N. Yaung, Y. K. Fang, K. C. Huang, C. Y. Chen, Yeong-Her Wang, C. C. Hung, S. G. Wuu, M. S. Liang

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The effects of off-state stress (Vgs = 0 V, Vds = 0 to -20 V) on unhydrogenated p-channel polysilicon thin-film transistors (TFTs) were studied. It was observed that the post-stressed subthreshold swing is first improved due to the annealing effect from the interaction of tunnelling electrons and captured holes. As the stress time increases or as the stress bias increases, the generation of traps caused by tunnelling electrons will cancel out the annealing effect and then degrade the subthreshold swing. In addition, the trapping of tunnelling electrons in the gate oxide causes a shift of threshold voltage. However, improving the quality of the gate oxide interface by oxidation of the channel polysilicon on submicrometre bottom-gate TFTs can reduce the impact of the off-state stress.

Original languageEnglish
Pages (from-to)888-891
Number of pages4
JournalSemiconductor Science and Technology
Volume15
Issue number9
DOIs
Publication statusPublished - 2000 Sep 1

Fingerprint

Thin film transistors
Polysilicon
Electron tunneling
transistors
electron tunneling
thin films
Oxides
Annealing
annealing
oxides
Threshold voltage
threshold voltage
trapping
traps
Oxidation
oxidation
causes
shift
interactions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Yaung, D. N. ; Fang, Y. K. ; Huang, K. C. ; Chen, C. Y. ; Wang, Yeong-Her ; Hung, C. C. ; Wuu, S. G. ; Liang, M. S. / Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress. In: Semiconductor Science and Technology. 2000 ; Vol. 15, No. 9. pp. 888-891.
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Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress. / Yaung, D. N.; Fang, Y. K.; Huang, K. C.; Chen, C. Y.; Wang, Yeong-Her; Hung, C. C.; Wuu, S. G.; Liang, M. S.

In: Semiconductor Science and Technology, Vol. 15, No. 9, 01.09.2000, p. 888-891.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Mechanism of device instability for unhydrogenated polysilicon TFTs under off-state stress

AU - Yaung, D. N.

AU - Fang, Y. K.

AU - Huang, K. C.

AU - Chen, C. Y.

AU - Wang, Yeong-Her

AU - Hung, C. C.

AU - Wuu, S. G.

AU - Liang, M. S.

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N2 - The effects of off-state stress (Vgs = 0 V, Vds = 0 to -20 V) on unhydrogenated p-channel polysilicon thin-film transistors (TFTs) were studied. It was observed that the post-stressed subthreshold swing is first improved due to the annealing effect from the interaction of tunnelling electrons and captured holes. As the stress time increases or as the stress bias increases, the generation of traps caused by tunnelling electrons will cancel out the annealing effect and then degrade the subthreshold swing. In addition, the trapping of tunnelling electrons in the gate oxide causes a shift of threshold voltage. However, improving the quality of the gate oxide interface by oxidation of the channel polysilicon on submicrometre bottom-gate TFTs can reduce the impact of the off-state stress.

AB - The effects of off-state stress (Vgs = 0 V, Vds = 0 to -20 V) on unhydrogenated p-channel polysilicon thin-film transistors (TFTs) were studied. It was observed that the post-stressed subthreshold swing is first improved due to the annealing effect from the interaction of tunnelling electrons and captured holes. As the stress time increases or as the stress bias increases, the generation of traps caused by tunnelling electrons will cancel out the annealing effect and then degrade the subthreshold swing. In addition, the trapping of tunnelling electrons in the gate oxide causes a shift of threshold voltage. However, improving the quality of the gate oxide interface by oxidation of the channel polysilicon on submicrometre bottom-gate TFTs can reduce the impact of the off-state stress.

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