Mechanisms and high performances of chlorine-treated GaN ultraviolet photodetectors

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A chlorination surface treatment was used to reduce the surface states of an n-type GaN surface, which improves the Schottky performances of the resultant metal-semiconductor contact. At a reverse bias of 10V, the dark current of the GaN-based UV-PDs with and without chlorinated surface treated were 28.1nA and 0.59μA, respectively. The dark current of chlorine-treated Schottky UV-PDs was 21 times of magnitude smaller than that of those without chlorination treatment. The product of quantum efficiency and internal gain of the GaN Schottky UV-PDs without and with chlorination treatment under a reverse voltage of 10V at a wavelength of 330nm was 650% and 100%, respectively. The internal gain of chlorine-treated GaN UV-PDs can be reduced due to the improvement of surface state density.

Original languageEnglish
Title of host publicationOptoelectronic Devices and Integration II
DOIs
Publication statusPublished - 2008 Mar 31
EventOptoelectronic Devices and Integration II - Beijing, China
Duration: 2007 Nov 122007 Nov 15

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6838
ISSN (Print)0277-786X

Other

OtherOptoelectronic Devices and Integration II
CountryChina
CityBeijing
Period07-11-1207-11-15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Lee, C. T., Lee, H. Y., Lin, C. C., & Chen, P. S. (2008). Mechanisms and high performances of chlorine-treated GaN ultraviolet photodetectors. In Optoelectronic Devices and Integration II [68380M] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6838). https://doi.org/10.1117/12.760196