Mechanisms of circular defects for shallow trench isolation oxide deposition

Jin Kun Lan; Ying Lang Wang; Chuan Pu Liu; Chuen Guang Chao; Chyung Ay; Chi Wen Liu; Yi Lung Cheng

doi:10.1116/1.1609475

Mechanisms of circular defects for shallow trench isolation oxide deposition

Jin Kun Lan, Ying Lang Wang, Chuan Pu Liu, Chuen Guang Chao, Chyung Ay, Chi Wen Liu, Yi Lung Cheng

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2098-2104
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	5
DOIs	https://doi.org/10.1116/1.1609475
Publication status	Published - 2003

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1609475

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title = "Mechanisms of circular defects for shallow trench isolation oxide deposition",

author = "Lan, {Jin Kun} and Wang, {Ying Lang} and Liu, {Chuan Pu} and Chao, {Chuen Guang} and Chyung Ay and Liu, {Chi Wen} and Cheng, {Yi Lung}",

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language = "English",

volume = "21",

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journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

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AU - Lan, Jin Kun

AU - Wang, Ying Lang

AU - Liu, Chuan Pu

AU - Chao, Chuen Guang

AU - Ay, Chyung

AU - Liu, Chi Wen

AU - Cheng, Yi Lung

PY - 2003

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DO - 10.1116/1.1609475

M3 - Article

AN - SCOPUS:0242677566

SN - 1071-1023

VL - 21

SP - 2098

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 5

ER -

Mechanisms of circular defects for shallow trench isolation oxide deposition

All Science Journal Classification (ASJC) codes

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