Mechanisms of enhancing band-edge luminescence of Zn1-x Mg xO prepared by the sol-gel method

Yow Jon Lin, Ping Hsun Wu, Chia Lung Tsai, Chia Jyi Liu, Ching Ting Lee, Hsing Cheng Chang, Zhi Ru Lin, Kai Yi Jeng

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13 Citations (Scopus)

Abstract

Zn1-xMgxO films prepared with different x were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1-xMg xO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1-xMgxO film.

Original languageEnglish
Article number125103
JournalJournal of Physics D: Applied Physics
Volume41
Issue number12
DOIs
Publication statusPublished - 2008 Jun 21

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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