Mechanisms of enhancing band-edge luminescence of Zn1-x Mg xO prepared by the sol-gel method

Yow Jon Lin; Ping Hsun Wu; Chia Lung Tsai; Chia Jyi Liu; Ching Ting Lee; Hsing Cheng Chang; Zhi Ru Lin; Kai Yi Jeng

doi:10.1088/0022-3727/41/12/125103

Mechanisms of enhancing band-edge luminescence of Zn_1-x Mg _xO prepared by the sol-gel method

Yow Jon Lin, Ping Hsun Wu, Chia Lung Tsai, Chia Jyi Liu, Ching Ting Lee, Hsing Cheng Chang, Zhi Ru Lin, Kai Yi Jeng

Department of Photonics

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Zn_1-xMg_xO films prepared with different x were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn_1-xMg _xO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn_0.94Mg_0.06O and up to 4-fold for Zn_0.958Mg_0.042O compared with the Zn_0.973Mg_0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn_1-xMg_xO film.

Original language	English
Article number	125103
Journal	Journal of Physics D: Applied Physics
Volume	41
Issue number	12
DOIs	https://doi.org/10.1088/0022-3727/41/12/125103
Publication status	Published - 2008 Jun 21

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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Lin, Y. J., Wu, P. H., Tsai, C. L., Liu, C. J., Lee, C. T., Chang, H. C., Lin, Z. R., & Jeng, K. Y. (2008). Mechanisms of enhancing band-edge luminescence of Zn_1-x Mg _xO prepared by the sol-gel method. Journal of Physics D: Applied Physics, 41(12), [125103]. https://doi.org/10.1088/0022-3727/41/12/125103

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title = "Mechanisms of enhancing band-edge luminescence of Zn1-x Mg xO prepared by the sol-gel method",

abstract = "Zn1-xMgxO films prepared with different x were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1-xMg xO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1-xMgxO film.",

author = "Lin, {Yow Jon} and Wu, {Ping Hsun} and Tsai, {Chia Lung} and Liu, {Chia Jyi} and Lee, {Ching Ting} and Chang, {Hsing Cheng} and Lin, {Zhi Ru} and Jeng, {Kai Yi}",

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T1 - Mechanisms of enhancing band-edge luminescence of Zn1-x Mg xO prepared by the sol-gel method

AU - Lin, Yow Jon

AU - Wu, Ping Hsun

AU - Tsai, Chia Lung

AU - Liu, Chia Jyi

AU - Lee, Ching Ting

AU - Chang, Hsing Cheng

AU - Lin, Zhi Ru

AU - Jeng, Kai Yi

PY - 2008/6/21

Y1 - 2008/6/21

N2 - Zn1-xMgxO films prepared with different x were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1-xMg xO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1-xMgxO film.

AB - Zn1-xMgxO films prepared with different x were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, atomic force microscopy, photoluminescence and conductivity measurements were used to characterize the Zn1-xMg xO films. The yield in the intensity of the band-edge luminescence (BEL) is seen to increase up to 21-fold for Zn0.94Mg0.06O and up to 4-fold for Zn0.958Mg0.042O compared with the Zn0.973Mg0.027O film. The enhanced BEL intensity has been attributed to an increase in the nonradiative recombination lifetime, a reduction in the oxygen-vacancy related defects and a reduction in the refractive index of the Zn1-xMgxO film.

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