A comparative mechanism investigation on the structural and optoelectronic properties of i-ZnO thin films, deposited on the silicon substrates at various temperatures were conducted. The experimental results verified that the i-ZnO films deposited at a low temperature have better quality over the conventional high temperature deposited ones. This low temperature deposition by using vapor cooling condensation technique has been successfully used to fabricate optoelectronic devices, such as UV light-emitting diodes and UV photodetectors. The mechanisms responsible for the fact that the low temperature deposited samples had better quality were analyzed in terms of the adsorption/desorption and diffusion of ZnO particles in the growth process.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)