Mechanisms of hot-carrier-induced threshold-voltage shift in high-voltage p-type LDMOS transistors

Jone F. Chen, Kuen Shiuan Tian, Shiang Yu Chen, Kuo Ming Wu, J. R. Shih, Kenneth Wu

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The phenomena and mechanisms of hot-carrier-induced threshold-voltage (V T ) shift in high-voltage p-type laterally diffused MOS (LDMOS) transistors are investigated. At low-|V gs| (absolute value of gate voltage) stress condition, electrons are injected and trapped in the gate oxide at the channel region near the drain, resulting in V T increase (Δ|V T| < 0). At high-|V gs| stress condition, however, severe VT decrease (Δ|VT

Original languageEnglish
Article number5280275
Pages (from-to)3203-3206
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume56
Issue number12
DOIs
Publication statusPublished - 2009 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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