Mechanisms of lighting enhancement of Al nanoclusters-embedded Al-doped ZnO film in GaN-based light-emitting diodes

Hsin Ying Lee, Ying Hung Chou, Ching Ting Lee, Wen Yung Yeh, Mu Tao Chu

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Aluminum (Al)-doped ZnO (AZO) films with embedded Al nanoclusters were proposed and utilized to enhance the light output power and maximum operation current of GaN-based light-emitting diodes (LEDs). The AZO films were sputtered using ZnO and Al targets in a magnetron cosputtering system. With Al dc power of 7 W and ZnO 100 W ac power, the electron concentration of 4.1× 10 20 cm-3, electron mobility of 16.2 cm2/V s, and resistivity of 7.2× 10-4 ωcm were obtained for the deposited AZO film annealed at 600 °C for 1 min in a N2 ambient. As verified by a high resolution transmission electron microscopy, the deposited AZO films with embedded Al nanoclusters were clearly observed. A 35% increase in light output power of the GaN-based LEDs with Al nanoclusters-embedded AZO films was realized compared with the conventional LEDs operated at 500 mA. It was verified experimentally that the various characteristics of GaN-based LEDs including the antireflection, light scattering, current spreading, and the light extraction efficiency in light emission could be significantly enhanced with the use of Al nanoclusters-embedded AZO films.

Original languageEnglish
Article number014503
JournalJournal of Applied Physics
Volume107
Issue number1
DOIs
Publication statusPublished - 2010 Feb 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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