Abstract
The i-ZnO film and n-ZnO:Al film were deposited on n-GaN layer using vapor cooling condensation system and sputter, respectively. The dark current of the resulting p-GaN/i-ZnO/n-ZnO:Al-heterostructured photodetectors was 4.11 pA. The rejection ratio between ultraviolet wavelength at 360 nm and visible wavelength at 420 nm was 3.0× 103 at a zero bias voltage. The low frequency noise exhibited the flicker noise (1/f) behaviors. With a reverse bias of-5 V, the flicker noise power density was about 2.51 × 10 -25A2, which corresponded to the high detectivity of 1.71 × 1011cmHz1/2 ċW-1. The flicker noise was the dominant noise source of the photodetectors.
Original language | English |
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Article number | 5499156 |
Pages (from-to) | 1117-1119 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 22 |
Issue number | 15 |
DOIs | |
Publication status | Published - 2010 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering