Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin oxide substrates

Yow Jon Lin; Chang Feng You; Wei Yang Chou; Shih Ting Lin

doi:10.1149/1.2225599

Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH₄)₂S_x-treated indium-tin oxide substrates

Yow Jon Lin, Chang Feng You, Wei Yang Chou, Shih Ting Lin

Department of Photonics

Research output: Contribution to journal › Article › peer-review

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Abstract

Photoelectron spectroscopy measurements show that (NH₄) ₂S_x surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (V_O) by sulfur and a reduction in the amount of V_O near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH₄)₂S_x treatment, shows that (NH₄)₂S_x treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of V_O-related defects near the ITO surface region).

Original language	English
Pages (from-to)	G302-G304
Journal	Electrochemical and Solid-State Letters
Volume	9
Issue number	10
DOIs	https://doi.org/10.1149/1.2225599
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH4)2Sx-treated indium-tin oxide substrates",

abstract = "Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).",

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AU - Lin, Yow Jon

AU - You, Chang Feng

AU - Chou, Wei Yang

AU - Lin, Shih Ting

PY - 2006

Y1 - 2006

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AB - Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).

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Mechanisms of performance improvement for polymer light-emitting diodes fabricated on (NH₄)₂S_x-treated indium-tin oxide substrates

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