Photoelectron spectroscopy measurements show that (NH4) 2Sx surface treatment may lead to an increase in the work function of indium-tin oxide (ITO), due to the occupation of oxygen vacancies (VO) by sulfur and a reduction in the amount of VO near the ITO surface region. Comparison between the current-luminance-voltage characteristics of polymer light-emitting diodes fabricated on ITO substrates with and without (NH4)2Sx treatment, shows that (NH4)2Sx treatment led to the enhancement of external quantum efficiency, due to the reduction of forward-biased leakage current (resulting from the reduction of VO-related defects near the ITO surface region).
|Journal||Electrochemical and Solid-State Letters|
|Publication status||Published - 2006|
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering