Mechanisms of ZnO buffer layer in bottom gate ZnO:Al transparent thin film transistors

Yung Hao Lin, Hsin Ying Lee, Ching Ting Lee, Cheng Hsu Chou

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The structure of Al-doped ZnO (ZnO:Al) transparent thin-film transistors (TTFTs) were deposited at room temperature using a radio frequency magnetron cosputter system. The performances of the ZnO:Al TTFTs were improved by inserting a ZnO buffer layer between the ZnO:Al channel layer and the SiO 2 gate insulator. The ZnO:Al TTFTs with 80-nm-thick ZnO buffer layer exhibited a higher field-effect mobility of 90.1 cm 2 (V s) -1, a lower subthreshold slope of 0.24 V/decade and a lower maximum surface state density of 2.69 × 10 11 eV -1 cm -2. The associated on-to-off current ratio of the TTFTs was 1.2 × 10 8. The performance improvement of the ZnO:Al TTFTs was attributed to crystalline improvement and the releasing functions of lattice mismatching and strain between the ZnO:Al channel layer and the SiO 2 insulator layer.

Original languageEnglish
Pages (from-to)1203-1207
Number of pages5
JournalMaterials Chemistry and Physics
Volume134
Issue number2-3
DOIs
Publication statusPublished - 2012 Jun 15

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

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