Meeting the challenge of multiple threshold voltages in highly scaled undoped FinFETs

Ramachandran Muralidhar, Jin Cai, David J. Frank, Phil Oldiges, Darsen Lu, Isaac Lauer

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Undoped FinFETs are of significant technological interest as they mitigate variation from random discrete dopant effects and provide for density and voltage scaling. A key requirement for undoped FinFETs for VLSI system application is the ability to obtain multiple threshold voltages on chip. This brief discusses options to obtain one logic and one SRAM threshold for both NFETs and PFETs in highly scaled undoped fins and shows that achieving such dual thresholds is challenging and requires new solutions such as more than two metal-gate work functions, dual fin thicknesses, or dual channel materials.

Original languageEnglish
Article number6459575
Pages (from-to)1276-1278
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume60
Issue number3
DOIs
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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