To investigate the memory bistable mechanisms of organic memory devices, the structure of [top Au anode/9,10-di(2-naphthyl)anthracene (ADN) active layer/bottom Au cathode] was deposited using a thermal deposition system. The Au atoms migrated into the ADN active layer was observed from the secondary ion mass spectrometry. The density of 9.6× 1016 cm-3 and energy level of 0.553 eV of the induced trapping centers caused by the migrated Au atoms in the ADN active layer were calculated. The induced trapping centers did not influence the carrier injection barrier height between Au and ADN active layer. Therefore, the memory bistable behaviors of the organic memory devices were attributed to the induced trapping centers. The energy diagram was established to verify the mechanisms.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)