Memory characteristics of metal-oxide-semiconductor structures based on ge nanoclusters-embedded GeO x films grown at low temperature

Tzu Shun Lin, Li Ren Lou, Ching Ting Lee, Tai Cheng Tsai

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The memory devices constructed from the Ge-nanoclusters embedded GeO x layer deposited by the laser-assisted chemical vapor deposition (LACVD) system were fabricated. The Ge nanoclusters were observed by a high-resolution transmission electron microscopy. Using the capacitance versus voltage (C-V) and the conductance versus voltage (G-V) characteristics measured under various frequencies, the memory effect observed in the C-V curves was dominantly attributed to the charge storage in the Ge nanoclusters. Furthermore, the defects existed in the deposited film and the interface states were insignificant to the memory performances. Capacitance versus time (C-t) measurement was also executed to evaluate the charge retention characteristics. The charge storage and retention behaviors of the devices demonstrated that the Ge nanoclusters grown by the LACVD system at low temperature are promising for memory device applications.

Original languageEnglish
Pages (from-to)2076-2080
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number3
DOIs
Publication statusPublished - 2012 Jul 3

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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